8900E Search Results
8900E Price and Stock
Siemens 3RA68900EACOMPACT STARTER PE EXPANSION PLU |
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3RA68900EA | Box | 1 | 1 |
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3RA68900EA |
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3RA68900EA | Bulk | 1 |
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Vishay Siliconix SI8900EDB-T2-E1MOSFET 2N-CH 20V 5.4A 10MFP |
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SI8900EDB-T2-E1 | Reel |
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SiTime Corporation SIT8008BC-13-33E-29.908900EPROGRAMMABLE, LOW POWER OSCILLATOR, -20 TO 70C, 2520, 50PPM, 3.3V, 29.9089MHZ, OE, SMD - Tape and Reel (Alt: SIT8008BC-13-33E-29.908900E) |
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SIT8008BC-13-33E-29.908900E | Reel | 12 Weeks | 1,000 |
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SiTime Corporation SIT1408BC-13-33N-29.908900EOSCILLATOR, SIT1408, -20 to 70C, 2520, 50ppm, 3.3V, 29.9089MHz, OE, T&R - Tape and Reel (Alt: SIT1408BC-13-33N-29.908900E) |
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SIT1408BC-13-33N-29.908900E | Reel | 12 Weeks | 1,000 |
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Vishay Intertechnologies SI8900EDB-T1Transistor MOSFET Array Dual N-Channel 20V 5.4A 10-Pin Micro Foot T/R - Tape and Reel (Alt: SI8900EDB-T1) |
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SI8900EDB-T1 | Reel | 111 Weeks | 3,000 |
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8900E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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8900E
Abstract: Si8900EDB
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Original |
Si8900EDB 275-mm 8900E Specification--PACK-0023-2 S-50073, 8900E | |
8900E
Abstract: J-STD-020A Si8900EDB sn 4060
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Original |
Si8900EDB S-21474--Rev. 26-Aug-02 8900E J-STD-020A sn 4060 | |
S1 0780
Abstract: 10-BUMP 8900E J-STD-020A Si8900EDB
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Original |
Si8900EDB 8900E 08-Apr-05 S1 0780 10-BUMP 8900E J-STD-020A | |
Contextual Info: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier |
Original |
Si8900EDB 8900E 8900E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si8407DB
Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
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Original |
Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB | |
Contextual Info: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier |
Original |
Si8900EDB 8900E 8900E 11-Mar-11 | |
D 5888 s
Abstract: SA 5888
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OCR Scan |
30O683 PS-5556-003. D 5888 s SA 5888 | |
S1 0780
Abstract: 8900E J-STD-020A Si8900EDB
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Original |
Si8900EDB S-20802--Rev. 01-Jul-02 S1 0780 8900E J-STD-020A | |
10-BUMP
Abstract: 8900E Si8900EDB ks-110
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Original |
Si8900EDB 8900E 18-Jul-08 10-BUMP 8900E ks-110 | |
31916Contextual Info: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V |
Original |
Si8900EDB 8900E 8900E S-31916--Rev. 15-Sep-03 31916 | |
Contextual Info: 8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier |
Original |
Si8900EDB 8900E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
10-BUMP
Abstract: 8900E J-STD-020A Si8900EDB
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Original |
Si8900EDB 8900E S-50066--Rev. 17-Jan-05 10-BUMP 8900E J-STD-020A | |
Contextual Info: 8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) rSS(on) (W) 20 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 APPLICATIONS 0.40 @ VGS = 1.8 V 5.5 D Battery Protection Circuit |
Original |
Si8900EDB 8900E 8900E 10BUMP S-20217--Rev. | |
Contextual Info: 8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V |
Original |
Si8900EDB 8900E 8900E S-21338--Rev. 05-Aug-02 |