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    Vishay Siliconix SI8802DB-T2-E1

    MOSFET N-CH 8V 4MICROFOOT
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    DigiKey () SI8802DB-T2-E1 Cut Tape 23,267 1
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    SI8802DB-T2-E1 Digi-Reel 23,267 1
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    SI8802DB-T2-E1 Reel 22,800 3,000
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    Quest Components SI8802DB-T2-E1 210
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    New Advantage Corporation SI8802DB-T2-E1 6,000 1
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    Vishay Intertechnologies SI8802DB-T2-E1

    N-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SI8802DB-T2-E1)
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    Avnet Americas SI8802DB-T2-E1 Reel 20 Weeks 3,000
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    Mouser Electronics SI8802DB-T2-E1 8,876
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    Verical () SI8802DB-T2-E1 3,000 3,000
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    SI8802DB-T2-E1 2,960 207
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    Arrow Electronics SI8802DB-T2-E1 3,000 14 Weeks 3,000
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    Newark () SI8802DB-T2-E1 Cut Tape 7,780 5
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    SI8802DB-T2-E1 Reel 3,000
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    Quest Components SI8802DB-T2-E1 960
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    TTI SI8802DB-T2-E1 Reel 9,000 3,000
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    Avnet Asia SI8802DB-T2-E1 12 Weeks 3,000
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    Chip One Stop SI8802DB-T2-E1 Cut Tape 2,960 0 Weeks, 1 Days 5
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    EBV Elektronik SI8802DB-T2-E1 15 Weeks 3,000
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    Vishay Intertechnologies SI8802DBT2E1

    N-CHANNEL 8 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI8802DBT2E1 6,000
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    SI8802DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8802DB-T2-E1
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V MICROFOOT Original PDF

    SI8802DB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    si8802

    Contextual Info: Si8802DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si8802DB AN609, 1060u 0709m 9256m 5154u 7987u 8059m 9703m 16-Jun-11 si8802 PDF

    Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1.0 • Halogen-free According to IEC 61249-2-21


    Original     		Si8802DB 2002/95/EC 11-Mar-11 PDF

    Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •


    Original     		Si8802DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si8802

    Contextual Info: SPICE Device Model Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si8802DB 11-Mar-11 si8802 PDF

    Contextual Info: Si8802DB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V


    Original     		Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •


    Original     		Si8802DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si8802

    Abstract: si88
    Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1 • • •


    Original     		Si8802DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8802 si88 PDF

    si8802

    Contextual Info: New Product Si8802DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.054 at VGS = 4.5 V 3.5 VDS (V) 8 0.060 at VGS = 2.5 V 3.3 0.068 at VGS = 1.8 V 3.1 0.086 at VGS = 1.5 V 2.3 0.135 at VGS = 1.2 V 1.0 • Halogen-free According to IEC 61249-2-21


    Original     		Si8802DB 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 si8802 PDF

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB PDF

    SI1489EDH

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		Si8489EDB Si8902AEDB VMN-PT0107-1402 PDF