SI6882EDQ Search Results

Si6882EDQ

Contextual Info: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET

75A27

Contextual Info: Si6882EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 24 FEATURES rDS(on) (Ω) ID (A) 0.019 @ VGS = 4.5 V 7.5 0.021 @ VGS = 3.7 V 6.9 0.023 @ VGS = 2.5 V 6.5 0.027 @ VGS = 1.8 V 6.0 D TrenchFETr Power MOSFET

AN609

Abstract: Si6882EDQ 74038
Contextual Info: Si6882EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6882EDQ

Contextual Info: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET

Contextual Info: Si6882EDQ Vishay Siliconix New Product N-Channel 1.8-V G-S Battery Switch, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 24 rDS(on) (Ω) ID (A) 0.019 at VGS = 4.5 V 7.5 0.021 at VGS = 3.7 V 6.9 0.023 at VGS = 2.5 V 6.5 0.027 at VGS = 1.8 V 6.0 • TrenchFET Power MOSFET

Si6882EDQ

Contextual Info: Si6882EDQ New Product Vishay Siliconix N-Channel 1.8-V G-S Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 24 FEATURES rDS(on) (Ω) ID (A) 0.019 @ VGS = 4.5 V 7.5 0.021 @ VGS = 3.7 V 6.9 0.023 @ VGS = 2.5 V 6.5 0.027 @ VGS = 1.8 V 6.0 D TrenchFETr Power MOSFET

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

Siliconix mosfet guide

Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT