SI4971DY Search Results

Si4971DY

Abstract: Si4971DY-T1
Contextual Info: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

Si4971DY

Abstract: Si4971DY-T1 Si4971DY-T1-E3
Contextual Info: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation

4914

Abstract: 4914 mosfet mosfet 4914 AN609 Si4971DY
Contextual Info: Si4971DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4971DY New Product Vishay Siliconix Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.026 @ VGS = - 10 V - 7.2 0.033 @ VGS = - 6 V - 6.4 D TrenchFETr Power MOSFET D 25-V VGS Provides Extra Head Room for Safe Operation

Si4971DY

Abstract: Si4971DY-T1 Si4971DY-T1-E3
Contextual Info: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation

s2 on of power switch 5 A

Abstract: mosfe Si4971DY Si4971DY-T1 Si4971DY-T1-E3 72174 S-61006-Rev
Contextual Info: Si4971DY Vishay Siliconix New Product Dual P-Channel 25-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.026 at VGS = - 10 V - 7.2 0.033 at VGS = - 6 V - 6.4 • TrenchFET Power MOSFET • 25 V VGS Provides Extra Head Room for Safe Operation

Si4971DY

Contextual Info: SPICE Device Model Si4971DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no