MOSFE Search Results

Contextual Info: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

d3004 transistor

Abstract: P3004 mofset
Contextual Info: SN75372 DUAL MOSFET DRIVER SLLSQ25A- P3004. JULY 1986 • Dual Circuits Capable of Driving Hlgh-Capacltance Loads at High Speeds • Output Supply Voltage Range up to 24 V D OR P PACKAGE TOP VIEW • Low Standby Power Dissipation 1A[ 1 E[ 2 U V CC1 7 ]1 Y

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

UFN450

Abstract: UFN451
Contextual Info: POWER MOSFET TRANSISTORS Hfflg? 500 Volt, 0.4 Ohm N-Channel UFN452 UFN453 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficie n t design a ch ieves a very low Rosiom and a high tran scon d u ctan ce.

toshiba 2505 dd

Contextual Info: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

Contextual Info: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T L P 3 540 Unit in mm M EM O R Y TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT 7 6 5 CT1 n_ n l~P MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared emitting diode optically coupled to a photo-MOSFET in a 8-pin DIP package.

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

ufn1130

Contextual Info: POWER MOSFET TRANSISTORS 700 Volt, 3.5 Ohm N-Channel UFNU3° FEATU RES DESCRIPTION • • • • • • This new U nitrode power MOSFET utilizes the latest high voR&ge advanced technology The efficient design achieves a very low Rosion. a n d a & ig ti tranSe^rvductance.

Contextual Info: TOSHIBA TENTATIVE TPD1035F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1035F LOW-SIDE POWER SWITCH FOR MOTOR, SOLENOID, AND LAMP DRIVERS TPD1035F is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly

UFNZ40

Contextual Info: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w

UFN140

Abstract: UFN143 kd 617
Contextual Info: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

5v to 20v pwm amplifier 40khz

Abstract: 100KRPM
Contextual Info: UC1625 UC3625 U IM IT R O O E Brushless DC Motor Controller FEATURES Drives Power MOSFETs or Power Darlingtons Directly 50V Open Collector High-Side Drivers Latched Soft Start High-speed Current-Sense Amplifier with Ideal Diode DESCRIPTION The UC1625 and UC3625 motor controller ICs integrate most of

Contextual Info: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)

Contextual Info: TPN22006NH MOSFETs Silicon N-channel MOS U-MOS-H TPN22006NH 1. Applications • Switching Voltage Regulators • Motor Drivers • DC-DC Converters 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 4.5 nC (typ.)

TL1454

Contextual Info: TL1454, TL1454Y DUAL-CHANNEL PULSE-WIDTH-MODULATION PWM CONTROL CIRCUIT SLVS086B – APRIL 1995 – REVISED NOVEMBER 1997 D D D D D D D D, N OR PW PACKAGE (TOP VIEW) Two Complete PWM Control Circuits Outputs Drive MOSFETs Directly Oscillator Frequency . . . 50 kHz to 2 MHz

Contextual Info: TPH8R80ANH MOSFETs Silicon N-channel MOS U-MOS-H TPH8R80ANH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 13 nC (typ.)

Contextual Info: TPD7211F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7211F Power MOSFET Gate Driver for half-bridge TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD process is applied on this product. Features z