SUD50P08 Search Results

9952

Abstract: 2429 AN609
Contextual Info: SUD50P08-25L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model SUD50P08-25L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

ic MARKING QG

Abstract: 37W40
Contextual Info: SUD50P08-26 New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –80 0.026 @ VGS = –10 V (A)a –50 Qg (Typ) APPLICATIONS RoHS D Automotive such as: – High Side Switch

Contextual Info: SPICE Device Model SUD50P08-26 Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUD50P08-26 New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –80 0.026 @ VGS = –10 V (A)a –50 Qg (Typ) APPLICATIONS RoHS D Automotive such as: – High Side Switch

id-12

Abstract: SUD50P08 05SEP0
Contextual Info: SPICE Device Model SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

S-71660-Rev

Abstract: sud50p0825le3
Contextual Info: New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0252 at VGS = - 10 V - 50 0.029 at VGS = - 4.5 V - 47 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 55 nC TO-252

S7166

Contextual Info: New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0252 at VGS = - 10 V - 50 0.029 at VGS = - 4.5 V - 47 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 55 nC TO-252

Contextual Info: New Product SUD50P08-26 Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 80 0.026 at VGS = - 10 V - 50 102 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-252 S G Drain Connected to Tab

SUD50P08-25L

Abstract: sud50p0825le3
Contextual Info: SUD50P08-25L New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0252 @ VGS = –10 V –50 0.029 @ VGS = –4.5 V –47 VDS (V) –80 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:

Contextual Info: SPICE Device Model SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0252 at VGS = - 10 V - 50 0.029 at VGS = - 4.5 V - 47 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 55 nC TO-252

06AUG07

Contextual Info: New Product SUD50P08-26 Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 80 0.026 at VGS = - 10 V - 50 102 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-252 S G Drain Connected to Tab

Contextual Info: SUD50P08-25L New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0252 @ VGS = –10 V –50 0.029 @ VGS = –4.5 V –47 VDS (V) –80 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs