STK22N Search Results

STK22N05

Contextual Info: STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STK22N05 50 V < 0.065 Ω 22 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: *57 SGS-THOMSON iL iO M iQ £ I S T K 2 2 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS(on) Id STK22N 05 50 V < 0.065 a 22 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

STK22N6F3

Contextual Info: STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge

Contextual Info: 7*^237 QG4bl31 l h ö « S f i T H _ *57 SGSTHOMSON S T K 2 2 N06 « [R ìm [E C T É M fl g S N - CHANNEL ENH A N C EM EN T MODE PO W ER MOS TRAN SISTO R TYPE V dss R oS (o n Id STK22N06 60 V < 0.065 £2 22 A . • ■ . . . . ■ TYPICAL Rds(oh) = 0.048 £2

STK22N6F3

Contextual Info: STK22N6F3 N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge

STK22N6F3

Abstract: JESD97
Contextual Info: STK22N6F3 N-channel 60 V, 0.0048 Ω, 22 A, PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on max STK22N6F3 60 V < 0.006 Ω • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)

Contextual Info: ¿57 SGS-THOMSON ¡U È T O « S T K 22 N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK22N05 . . • . . . ■ . R D S o n Id < 0.065 Q. 22 A dss 50 V TYPICAL RDs(on) = 0.048 Q. AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STK22N06

Contextual Info: STK22N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STK22N06 60 V < 0.065 Ω 22 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: £ T 7 Ä 7 # S G M S - T H O M S f i» [ L [ iO S O N T * S S T K 2 2 N 0 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . . TYPE V dss R dS(oîi Id STK22N05 50 V 0.065 Q 22 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: £jï SGS-THOMSON ULKgraMOeS S T K 2 2 N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TK22N 06 . . . . . . . . V dss 60 V R D S o n Id < 0 .0 6 5 Q. 22 A TYPICAL Rds(oh) = 0.048 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

7N90FI

Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
Contextual Info: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0

L9943

Abstract: transistor tda2003 CAR ALTERNATOR VOLTAGE REGULATOR l4949nd STP65N06 buz11 in motor driver circuit RB040-40T CAR ALTERNATOR hall switch ignition MOSFET IGNITION
Contextual Info: AUTOMOTIVE RECOMMENDED PRODUCTS FROM SGS-THOMSON SPECIAL FUNCTIONS Type Number L4620 L9610C/11C L9686 L9700 L9703 L9704 FUEL INJECTION Description Liquid Level Alarm PWM Powermos Controller Automotive Indicator Hex Precision Limiter Octal Ground Contact Monitoring Circuit

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000