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    TP30N Search Results

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    TP30N Price and Stock

    STMicroelectronics STP30N65M5

    MOSFET N-CH 650V 22A TO220AB
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    DigiKey STP30N65M5 Tube 2,716 1
    • 1 $6.71
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    • 1000 $3.23138
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    Avnet Americas STP30N65M5 Tube 1,000 14 Weeks 1,000
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    Mouser Electronics STP30N65M5 787
    • 1 $6.58
    • 10 $6.27
    • 100 $3.43
    • 1000 $3.23
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    Newark STP30N65M5 Bulk 1
    • 1 $8.28
    • 10 $7.97
    • 100 $5.22
    • 1000 $4.94
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    STMicroelectronics STP30N65M5 787 1
    • 1 $6.45
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    TME STP30N65M5 1
    • 1 $5.78
    • 10 $4.56
    • 100 $3.78
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    ComSIT USA STP30N65M5 200
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    Avnet Silica STP30N65M5 450 15 Weeks 50
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    Chip Stock STP30N65M5 2,084
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    EBV Elektronik STP30N65M5 15 Weeks 50
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    STMicroelectronics STP30N10F7

    MOSFET N-CH 100V 32A TO220AB
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    DigiKey STP30N10F7 Tube 848 1
    • 1 $2.41
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    • 1000 $0.84816
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    Newark STP30N10F7 Bulk 1
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    STMicroelectronics STP30N10F7 1
    • 1 $1.73
    • 10 $1.56
    • 100 $1.25
    • 1000 $1.03
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    Bristol Electronics STP30N10F7 44 2
    • 1 -
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
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    Avnet Silica STP30N10F7 1,000 143 Weeks 50
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    EBV Elektronik STP30N10F7 143 Weeks 50
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    Rochester Electronics LLC LP2985AITP-3.0-NOPB

    IC REG LINEAR 3V 150MA 5-DSBGA
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    DigiKey LP2985AITP-3.0-NOPB Bulk 500 500
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    • 1000 $0.35
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    STMicroelectronics STP30NF10

    MOSFET N-CH 100V 35A TO220AB
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    DigiKey STP30NF10 Tube 382 1
    • 1 $1.19
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    • 100 $1.19
    • 1000 $0.85376
    • 10000 $0.85376
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    Avnet Americas STP30NF10 Tube 13 Weeks 2,000
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    • 1000 $0.42152
    • 10000 $0.39643
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    Mouser Electronics STP30NF10 2,012
    • 1 $0.89
    • 10 $0.877
    • 100 $0.872
    • 1000 $0.871
    • 10000 $0.853
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    Newark STP30NF10 Bulk 139 1
    • 1 $1.17
    • 10 $0.864
    • 100 $0.854
    • 1000 $0.664
    • 10000 $0.492
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    STP30NF10 Bulk 1,000
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    STMicroelectronics STP30NF10 2,012 1
    • 1 $0.87
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    TME STP30NF10 276 1
    • 1 $1.66
    • 10 $1.11
    • 100 $0.92
    • 1000 $0.73
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    Ameya Holding Limited STP30NF10 640
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    ComSIT USA STP30NF10 694
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    Avnet Silica STP30NF10 31,450 14 Weeks 50
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    EBV Elektronik STP30NF10 12,100 14 Weeks 50
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    STMicroelectronics STP30NF20

    MOSFET N-CH 200V 30A TO220AB
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    DigiKey STP30NF20 Tube 270 1
    • 1 $2.88
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    • 1000 $0.95838
    • 10000 $0.8665
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    Avnet Americas STP30NF20 Tube 13 Weeks 1,000
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    • 1000 $0.87747
    • 10000 $0.82524
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    Mouser Electronics STP30NF20 388
    • 1 $2.87
    • 10 $1.39
    • 100 $1.29
    • 1000 $0.98
    • 10000 $0.866
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    STMicroelectronics STP30NF20 388 1
    • 1 $2.81
    • 10 $1.36
    • 100 $1.26
    • 1000 $1.04
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    TME STP30NF20 97 1
    • 1 $2.61
    • 10 $2.07
    • 100 $1.88
    • 1000 $1.73
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    ComSIT USA STP30NF20 400
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    Avnet Silica STP30NF20 1,350 14 Weeks 50
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    EBV Elektronik STP30NF20 14 Weeks 50
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    Vyrian STP30NF20 5,316
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    Find more TP30N price and stock on Findchips.com

    TP30N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP30N 06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		MTP30N06VL/D TP30N 21A-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « TP30N06 TP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E TP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E TP30N05 S TP30N05FI SGS-THOMSON ¡m era « TP30N05 TP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220 PDF

    HI SPEED, HI CURRENT, TO-220, TRANSISTOR

    Abstract: No abstract text available
    Text: SGS-THOMSON IIL IIO T *! TP30N05 TP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP30N 05 S TP30N 05FI V dss RDS on 50 V 50 V 0 .0 5 n 0 .0 5 Q Id ' 30 A 18 A . • . . . . AVALANCHE RU G G EDN ESS TECHNOLOG Y 100% AVALANCHE TESTED


    OCR Scan     		STP30N05 STP30N05FI TP30N ATT220 STP30N05/FI HI SPEED, HI CURRENT, TO-220, TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON s tp 3 0 n 0 5 ilLiCTIIMDe TP30N 05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TP30N 05 S TP30N 05FI • • . ■ ■ . ■ ■ V dss R DS on Id 50 V 50 V < 0.05 a < 0.05 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		STP30N TP30N PDF

    P50N05

    Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
    Text: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2


    OCR Scan     		BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E PDF

    Untitled

    Abstract: No abstract text available
    Text: TP30NE06 TP30NE06FP N - CHANNEL 60V - 0.042 Q - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIM IN A R Y DATA TYPE V dss R D S o n Id TP30N E06 TP30NE06FP 60 V 60 V < 0 .0 5 0 Q < 0 .0 5 0 Q 30 A 17 A . TYPICAL RDS(on) = 0.042 Q


    OCR Scan     		STP30NE06 STP30NE06FP T0-220/T0-220FP STP30N PDF

    Untitled

    Abstract: No abstract text available
    Text: TP30NE06 TP30NE06FP N - CHANNEL 60V - 0.042 £2 - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id TP30NE06 TP30NE06FP 60 V 60 V < 0 .0 5 0 Q. < 0 .0 5 0 Q, 30 A 17 A . TYPICAL Ros(on) = 0.042 Ç1


    OCR Scan     		STP30NE06 STP30NE06FP T0-220/T0-220FP STP30NE06/FP O-22QFP PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    MTP3055EL

    Abstract: MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10
    Text: TT TMOS TMOS Power MOSFETs Logic Level Power MOSFETs ISOLATED TO-220 CASE 221D-02 MTA PREFIX T0-220AB CASE 221A-06 (MTP PREFIX TO-251* CASE 369-05 (MTD PREFIX) TO-252 CASE 369A-09 (MTD PREFIX) Logic level M O SFETs are fu lly en ha nce d w ith 5 volts applied to the gate.


    OCR Scan     		O-220 221D-02 T0-220AB 21A-06 O-251* O-252 69A-09 O-22QAB) TP12N10EL TA11N10ELSÙ MTP3055EL MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10 PDF

    Kelvin KM 300 resistor

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F b3b7254 □ Ü ‘i67ô4 ÔT1 • M O T b bflE D MOTOROLA m SEM IC O N D U C T O R i TECHNICAL DATA TP30N08M P o w e r Field E ffe c t T ra n sisto r IM-Channel Enhancem ent-M ode S ilicon G ate w ith C u rren t Sensing C apability


    OCR Scan     		b3b7254 Kelvin KM 300 resistor PDF

    MTP30N08M

    Abstract: AN569 MC34129 sensefet high voltage current mirror mosfet current mirror 314B03
    Text: M O T O R O L A SC X S T R S / R F b 3 b 7 2 5 4 □ Ü ‘iô7ô4 ôTl • MOTb bflE » MOTOROLA SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor IM-Channel Enhancement-Mode Silico n Gate w ith Current Sensing Capability TM OS S E N S E F E T DEVICE


    OCR Scan     		MC34129 MTP30N08M AN569 sensefet high voltage current mirror mosfet current mirror 314B03 PDF

    IRFZ30

    Abstract: IRFZ32
    Text: MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA IRFZ30 IRFZ32 P o w e r F ie ld E f f e c t T ra n s is to rs N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S P ow er FETs are designed fo r lo w vo ltag e , h ig h speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g


    OCR Scan     		IRFZ30 IRFZ32 IRFZ30. IRFZ32 PDF

    7N90FI

    Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
    Text: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0


    OCR Scan     		TP40N STP45N 05LFI Z11FI TP30N STK22N STP25N 7N90FI 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan     		2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code PDF

    Untitled

    Abstract: No abstract text available
    Text: P I SGS-TUOMSON TP30N06 TP30N06FI I1LìI O T 2 *S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE TP30N06 TP30N 06FI V dss RoS(on 60 V 60 V 0.05 0.05 n il Id 30 A 18 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STP30N06 STP30N06FI STP30N O-220 ISOWATT220 STP30N06/FI PDF