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    STP30N Price and Stock

    STMicroelectronics STP30N20

    MOSFET N-CH 200V 30A TO220AB
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    DigiKey STP30N20 Tube 1,000
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    STMicroelectronics STP30NM50N

    MOSFET N-CH 500V 27A TO220-3
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    Quest Components STP30NM50N 20
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    STMicroelectronics STP30NM30N

    MOSFET N-CH 300V 30A TO220AB
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    STMicroelectronics STP30NM60N

    MOSFET N-CH 600V 25A TO220AB
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    ComSIT USA STP30NM60N 85
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    STMicroelectronics STP30NM60ND

    MOSFET N-CH 600V 25A TO220AB
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    Find more STP30N price and stock on Findchips.com

    STP30N Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP30N05 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP30N05 STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STP30N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP30N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP30N05FI STMicroelectronics N - Channel Enhancement Mode Power MOS Transistor Original PDF
    STP30N05FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP30N05FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP30N05FI Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP30N06 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP30N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP30N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP30N06FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP30N06FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP30N06FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP30N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP30N10F7 STMicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 32A TO220AB Original PDF
    STP30N20 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 30A TO-220 Original PDF
    STP30N65M5 STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 22A TO220 Original PDF
    STP30NE03L STMicroelectronics N - CHANNEL 30V - 0.028 ? - 30A TO-220-TO-220FP STripFET POWER MOSFET Original PDF
    STP30NE03LFP STMicroelectronics N - CHANNEL 30V - 0.028 ? - 30A TO-220-TO-220FP STripFET POWER MOSFET Original PDF

    STP30N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Q. - 30A - TO 220/T0-220FP STripFET POWER MOSFET TYPE V dss RDS on Id STP30NE06L STP30NE06LFP 60 V 60 V < 0 .0 5 Q. < 0 .0 5 Q. 30 A 17 A . • TYPICAL R D S (on) = 0.035 100% AVALANCHE TESTED . LOW GATE CHARGE


    OCR Scan     		STP30NE06L STP30NE06LFP 220/T0-220FP STP30NE06L/FP O-22QFP PDF

    STP30N05

    Abstract: STP30N05FI
    Text: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP30N05 STP30N05FI 100oC 175oC O-220 ISOWATT220 STP30N05 STP30N05FI PDF

    p30ne06

    Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
    Text: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω


    Original     		STP30NE06 STP30NE06FP O-220/TO-220FP P30NE06 P30NE06FP 175oC p30ne06 STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220 PDF

    STP30NE06L

    Abstract: STP30NE06LFP
    Text: STP30NE06L STP30NE06LFP N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP30NE06L STP30NE06LFP 60 V 60 V < 0.05 Ω < 0.05 Ω 30 A 17 A • ■ ■ ■ TYPICAL RDS(on) = 0.035 Ω 100% AVALANCHE TESTED


    Original     		STP30NE06L STP30NE06LFP O-220/TO-220FP O-220 STP30NE06L STP30NE06LFP PDF

    200V AUTOMOTIVE MOSFET

    Abstract: 30NF20 JESD97 STP30NF20 STW30NF20
    Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■


    Original     		STP30NF20 STW30NF20 O-220/TO-247 O-247 O-220 200V AUTOMOTIVE MOSFET 30NF20 JESD97 STP30NF20 STW30NF20 PDF

    STP30N05

    Abstract: STP30N05FI
    Text: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP30N05 STP30N05FI 100oC 175oC O-220 ISOWATT220 STP30N05 STP30N05FI PDF

    DD 127 D TRANSISTOR

    Abstract: JIS B 0409
    Text: *57 TYPE STP30N06 STP30N06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		STP30N STP30N06 STP30N06FI DD 127 D TRANSISTOR JIS B 0409 PDF

    CT-1004

    Abstract: D4808
    Text: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω


    Original     		STB30NM50N STI30NM50N STF30NM50N STP30NM50N, STW30NM50N O-220FP, O-220, O-247 CT-1004 D4808 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 Q - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIM IN A R Y DATA TYPE V dss R D S o n Id STP30N E06 STP30NE06FP 60 V 60 V < 0 .0 5 0 Q < 0 .0 5 0 Q 30 A 17 A . TYPICAL RDS(on) = 0.042 Q


    OCR Scan     		STP30NE06 STP30NE06FP T0-220/T0-220FP STP30N PDF

    STP30N06

    Abstract: STP30N06FI
    Text: STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP30N06 STP30N06FI 100oC 175oC O-220 ISOWATT220 STP30N06 STP30N06FI PDF

    STP30NF10

    Abstract: STP30NF10FP STB30NF10
    Text: STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A


    Original     		STB30NF10 STP30NF10 STP30NF10FP O-220/TO-220FP/D2PAK STP30NF10 O-263) STP30NF10FP STB30NF10 PDF

    30NF20

    Abstract: JESD97 STP30NF20 STW30NF20
    Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • ■ Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ) s ( ct


    Original     		STP30NF20 STW30NF20 O-220/TO-247 O-247 30NF20 JESD97 STP30NF20 STW30NF20 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 £2 - 30A - T0-220/T0-220FP _ STripFET POWER MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STP30NE06 STP30NE06FP 60 V 60 V < 0 .0 5 0 Q. < 0 .0 5 0 Q, 30 A 17 A . TYPICAL Ros(on) = 0.042 Ç1


    OCR Scan     		STP30NE06 STP30NE06FP T0-220/T0-220FP STP30NE06/FP O-22QFP PDF

    P30NE0

    Abstract: P30NE06 P30NE06l p30ne STP30NE06L STP30NE06LFP ns208 C3017 STripFET
    Text: STP30NE06L STP30NE06LFP  N - CHANNEL 60V - 0.040 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE STP30NE06L STP30NE06LFP • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.05 Ω < 0.05 Ω 30 A 17 A TYPICAL RDS(on) = 0.045 Ω


    Original     		STP30NE06L STP30NE06LFP O-220/TO-220FP 175oC P30NE0 P30NE06 P30NE06l p30ne STP30NE06L STP30NE06LFP ns208 C3017 STripFET PDF

    F30NM60ND

    Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
    Text: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND


    Original     		STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND O-220/FP/D2PAK/I2PAK/TO-247 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND O-220 O-220FP F30NM60ND 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND PDF

    STP30N05

    Abstract: STP30N05FI
    Text: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		STP30N05 STP30N05FI 100oC 175oC O-220 ISOWATT220 STP30N05 STP30N05FI PDF

    STW30NM50N

    Abstract: 30NM50N STP30NM50N STB30NM50N STF30NM50N STI30NM50N
    Text: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω


    Original     		STB30NM50N STI30NM50N STF30NM50N STP30NM50N, STW30NM50N O-220FP, O-220, O-247 STB30NM50N STI30NM50N STW30NM50N 30NM50N STP30NM50N STF30NM50N PDF

    STP30NE06

    Abstract: STP30NE06FP
    Text: STP30NE06 STP30NE06FP N - CHANNEL 60V - 0.042 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STP30NE06 STP30NE06FP 60 V 60 V < 0.050 Ω < 0.050 Ω 30 A 17 A TYPICAL RDS(on) = 0.042 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		STP30NE06 STP30NE06FP O-220/TO-220FP 175oC STP30NE06 STP30NE06FP PDF

    30NF20

    Abstract: STP30NF20 STW30NF20 JESD97
    Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested


    Original     		STP30NF20 STW30NF20 O-220/TO-247 30NF20 STP30NF20 STW30NF20 JESD97 PDF

    B30NF10

    Abstract: p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4
    Text: STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB30NF10 100V <0.045Ω 35A STP30NF10 100V <0.045Ω 35A STP30NF10FP 100V <0.045Ω


    Original     		STB30NF10 STP30NF10 STP30NF10FP D2PAK/TO-220/TO-220FP STP30NF10 O-220 O-220FP B30NF10 p30nf10 P30NF10FP STP30NF10 equivalents mosfet STP30NF10 equivalents P30NF b30nf B30NF10d STB30NF10 STB30NF10T4 PDF

    P30NS15LFP

    Abstract: P30NS
    Text: STP30NS15LFP N-channel 150V - 0.085Ω - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS on ID STP30NS15LFP 150V <0.1Ω 10A • Extremely high dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested


    Original     		STP30NS15LFP O-220FP P30NS15LFP P30NS PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220 PDF

    STP30NM30N

    Abstract: No abstract text available
    Text: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance


    Original     		STP30NM30N O-220 O-220 STP30NM30N PDF