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    STD12N06 Price and Stock

    SGS Thomson STD12N06

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    Bristol Electronics STD12N06 34,999
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    SGS Thomson STD12N06T4

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    Bristol Electronics STD12N06T4 34,999
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    STMicroelectronics STD12N06L-1

    12A, 60V, 0.15OHM, N-CHANNEL, SI, POWER, MOSFET, TO-251
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components STD12N06L-1 66
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    STD12N06 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD12N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD12N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N06L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD12N06L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD12N06L-1 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD12N06LT4 STMicroelectronics N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STD12N06LT4 STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STD12N06T4 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD12N06T4.STD12N06-1 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF

    STD12N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD12N05L

    Abstract: STD12N06L
    Text: STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V DSS R DS on ID STD12N05L TYPE 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD12N05L STD12N06L 100oC 175oC O-251) O-252) O-251 O-252 STD12N05L STD12N06L

    STD12N05

    Abstract: STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06

    STD12N05

    Abstract: STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06

    STD12N05

    Abstract: STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 STD12N05 STD12N06

    diode b6 k 450

    Abstract: STD12N05 STD12N06
    Text: STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STD12N05 STD12N06 100oC 175oC O-251) O-252) O-251 O-252 diode b6 k 450 STD12N05 STD12N06

    STD12N05L

    Abstract: STD12N06L
    Text: STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD12N05L STD12N06L 100oC 175oC O-251) O-252) O-251 O-252 STD12N05L STD12N06L

    STD12N05L

    Abstract: STD12N06L
    Text: STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD12N05L STD12N06L 100oC 175oC O-251) O-252) O-251 O-252 STD12N05L STD12N06L

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


    Original     		PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    scr power control schematic

    Abstract: EL 4N25 4n25 application note AN26-1 BYT11-1000 IGBT DRIVER application note AN-556 TN197 BYT11-1000 equivalent IGBT DRIVER SCHEMATIC chip
    Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface


    Original     		PDF AN556 L6353: L6353 scr power control schematic EL 4N25 4n25 application note AN26-1 BYT11-1000 IGBT DRIVER application note AN-556 TN197 BYT11-1000 equivalent IGBT DRIVER SCHEMATIC chip

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    AN-556

    Abstract: AN556 application note 100uf25v scr power control schematic TN197 L6353 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25
    Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface


    Original     		PDF AN556 L6353: L6353 AN-556 AN556 application note 100uf25v scr power control schematic TN197 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    Electronic car ignition circuit

    Abstract: alternator voltage regulator VB020-4 L9463 CAR ALTERNATOR VOLTAGE REGULATOR CAR ALTERNATOR REGULATOR MOSFET IGNITION RB040-40T Window Lift Controller CAR ALTERNATOR
    Text: AUTOMOTIVE RECOMMENDED PRODUCTS FROM SGS-THOMSON SPECIAL FUNCTIONS Type Number L4620 L9610C/11C L9639 L9686 L9700 L9703 L9704 FUEL INJECTION Description Liquid Level Alarm PWM Powermos Controller Side mirror folder actuator Automotive Indicator Hex Precision Limiter


    Original     		PDF L4620 L9610C/11C L9639 L9686 L9700 L9703 L9704 TDA2320A TDA3420 TDA7302 Electronic car ignition circuit alternator voltage regulator VB020-4 L9463 CAR ALTERNATOR VOLTAGE REGULATOR CAR ALTERNATOR REGULATOR MOSFET IGNITION RB040-40T Window Lift Controller CAR ALTERNATOR

    std2n52

    Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06


    Original     		PDF OT-82 OT-223 O-220 220TM O-220FP MAX220TM 218TM O-247 MAX247TM STB80NE03L-06 std2n52 stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L


    Original     		PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    12n06

    Abstract: No abstract text available
    Text: ¿ 5 S G S -T H O M S O N ¡m e ra « 7 S T D 12N05 S T D 12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STD12N05 50 V STD12N06 60 V R DS on Id a < 0.15 a 12 A < 0.15 12 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 12N05 12N06 STD12N05 STD12N06 O-251) O-252) O-251 O-252 STD12N05/STD12N06 12n06

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 SGS-THOMSON ¡Hiera « 7 STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E V dss STD12N05L 50 V STD12N06L 60 V RüS on Id a < 0.15 a 12 A < 0.15 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STD12N05L STD12N06L O-251) O-252) O-251 O-252 STD12N05L/STD12N06L

    2N06L

    Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
    Text: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl STD12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1


    OCR Scan     		PDF STD12N06L 12N05L 12N06L 2N06L 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos

    2N06

    Abstract: 2N05 D12N05
    Text: *57 s td i 2N05 SGS-THOMSON i L i O M K I S T D 1 2 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS on Id STD12N05 50 V < 0.15 a 12 A STD12N06 60 V < 0.15 ß 12 A • . . ■ ■ . ■ ■ TYPICAL RDS(on) = 0.1 £2 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STD12N05 STD12N06 O-251) O-252) O-251 O-252 2N06 2N05 D12N05