NE900275
Abstract: NE900175 ne900075 NE900200 S50240 NE900100G NE9002 ne900 NE9001 NE900000
Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • TYPICAL LINEAR GAIN vs. FREQUENCY CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB 24 21 HIGH POWER ADDED EFFICIENCY Linear Gain dB • • DESCRIPTION
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NE9000
NE9001
NE9002
NE9000,
NE9001,
NE900000,
NE900100,
NE900200,
NE900275
NE900175
ne900075
NE900200
S50240
NE900100G
ne900
NE900000
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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NE900474-13
Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000
Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001
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NE9004
NE900474-13,
NE9004
NE900
NE9000,
NE9001
NE9002.
24-Hour
NE900474-13
NE900474-15
NE900400G
NE9002
AN-1001
NE9000
NE9001
UM1000
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
24-Hour
NE800296
diode deg avalanche zo 150 63
NE72089
ne8002
SK3448
universal jfet biasing curve graph
gunn diode ghz s-parameter
NE800196
impatt diode
NE800495-4
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NE900275
Abstract: NE900175 ne900075 3232 marking RF 98 NE9000
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 75 +0.15 -0.05 2 PLACES f 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 9.8 MAX 2.85 1.13 0.9 MAX
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NE900075
NE900175
NE900275
24-Hour
NE900275
NE900175
ne900075
3232
marking RF 98
NE9000
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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NE900275
Abstract: No abstract text available
Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • CLASS A OPERATION • HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7dB • HIGH POWER ADDED EFFICIENCY *D DESCRIPTION ¡3 O 5 The NIE9000, N E 9 0 0 1 , and N E 9 0 0 2 are 0.5 micron recessed
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NE9000
NE9001
NE9002
NIE9000,
IS12S21I
NE900275
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NE900175
Abstract: No abstract text available
Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES TYPICAL UNEAR GAIN vs. FREQUENCY • CLASS A OPERATION • HIGH OUTPUT POWER 3 o u t = 26.5 dBm 3idB - 7 dB • HIGH POWER ADDED EFFICIENCY DESCRIPTION The NE9000, N E 9001, and NE9002 are 0.5 micron recessed
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NE9000
NE9001
NE9002
NE9000,
E900100,
E900200,
E900000,
E900200
NE900175
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NE900275
Abstract: NE9002
Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES . CLASS A OPERATION . HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7 d B • HIGH POWER ADDED EFFICIENCY CÛ *o DESCRIPTION 3 The NE9000, NE9001, and NE9002 are 0.5 micron recessed
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NE9000
NE9001
NE9002
NE9000,
NE9001,
theNE900000,
NE900100,
NE900200,
NE900000,
NE900275
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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ne900075
Abstract: NE9000
Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27
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NEZ1414-2E
NEZ1414-4E
NEZ1414-8E
NEZ1011-2E
NEZ1011-8E
ne900075
NE9000
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NE9004
Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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NE9004
NE900474-13
NE900
NE9000,
NE9001
NE9002.
AN-1001
L427525
NE900400
NE900474-15
NE900400G
MC 88000
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NE900474-13
Abstract: ne900474-15 NE9004 NE900474 NE900400G NE900400
Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13, <15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
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NE9004
NE900474-13,
E9004
E9000,
NE9001
NE9002.
AN-1001
NE900474-13
ne900474-15
NE900474
NE900400G
NE900400
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NE800495-4
Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D
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NEZ4450-15D
NEZ4450-15DD
NEZ4450-8D
NEZ4450-8DD
MEZ4450-4D
NEZ4450-4DD
MEZ5964-15D
NEZ5964-15DD
NEZ5964-8D
KEZ5964-8DD
NE800495-4
GaAs MESFET
NE900474-15
NE800400
NE8004
NE800296
NES2527-20B
NE900400
NES1417-20B
NE800196
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