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Rochester Electronics LLC MJE18002D2 TRANS NPN 450V 2A TO220-3
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Motorola Semiconductor Products MJE18002D2 MJE18002D2
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Verical	MJE18002D2		13,900		751	1 - 10 - 100 - 1000 $0.472 10000 $0.472	Buy Now
Motorola Mobility LLC MJE18002D2 Power Bipolar Transistor, 2A, 450V, NPN, TO-220AB, 3 Pin '
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Rochester Electronics	MJE18002D2		13,900		1	1 $0.4442 10 $0.4442 100 $0.4175 1000 $0.3776 10000 $0.3776	Buy Now

MJE18002D2 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
MJE18002D2	Motorola	POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS	Original	PDF
MJE18002D2	On Semiconductor	High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network	Original	PDF
MJE18002D2	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB, CASE 221A-09, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
MJE18002D2AF	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2AJ	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2AK	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2AN	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2AS	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2AU	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2BA	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2BC	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2BD	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2BG	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF

MJE18002D2BS	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2BU	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2BV	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF
MJE18002D2-D	On Semiconductor	High Speed, High Gain Bipolar NPN Power Transistor	Original	PDF
MJE18002D2DW	On Semiconductor	MJE18002 - TRANSISTOR 2 A, 450 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power	Original	PDF

MJE18002D2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE18002D2 Abstract: No abstract text available Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJE18002D2 POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS The MJE18002D2 use a newly developed technology, so called	Original	PDF	MJE18002D2 MJE18002D2 r14525 MJE18002D2/D
BU108 Abstract: D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design	Original	PDF	MJE18002D2 MJE18002D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D44C12 BDX54 electronic ballast with MJE13003 BU326 BU100
BALLAST MOTOROLA Abstract: PFC BALLAST CONTROL IC MJE18002D2 Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient	Original	PDF	MJE18002D2/D* MJE18002D2/D BALLAST MOTOROLA PFC BALLAST CONTROL IC MJE18002D2
transistor Electronic ballast "INDUCTION LAMP" Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic	Original	PDF	AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
d2 transistor Abstract: motorola transistor cross reference motorola bipolar transistor GUIDE AN1543 Electronic Lamp Ballast Design high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUD44D2 Text: MOTOROLA Order this document by AN1577/D SEMICONDUCTOR APPLICATION NOTE AN1577 Motorola's D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. OTERO Application Engineer – MOTOROLA – Toulouse INTRODUCTION ture are probably the most critical issues the designer has to	Original	PDF	AN1577/D AN1577 d2 transistor motorola transistor cross reference motorola bipolar transistor GUIDE AN1543 Electronic Lamp Ballast Design high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUD44D2
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	PDF	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	PDF	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	PDF	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	PDF	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	PDF	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	PDF	MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	PDF	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	PDF	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	PDF	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	PDF	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	PDF	TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Transistor 2sC1060 Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:	Original	PDF	BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
MJ11017 equivalent Abstract: BU108 MJ11021 BU326 BU100 MJE3055T Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types	Original	PDF	MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	PDF	BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	PDF	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
BU108 Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:	Original	PDF	BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient	OCR Scan	PDF	MJE18002D2/D MJE18002D2 MJE18002D2
bip 373 Abstract: No abstract text available Text: MOTOROLA O rder th is docum ent by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA M JE18002D 2 Advance Information High Speed, High Gain Bipolar NPN Pow er Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk	OCR Scan	PDF	MJE18002D2/D JE18002D MJE18002D2 2PHX34555C bip 373
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power TVansistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS	OCR Scan	PDF	MJE18002D2

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MJE18002D2 Price and Stock

Rochester Electronics LLC MJE18002D2

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MJE18002D2 Datasheets (19)

MJE18002D2 Datasheets Context Search

MJE18002D2

BU108

BALLAST MOTOROLA

transistor Electronic ballast "INDUCTION LAMP"

d2 transistor

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

mje521 equivalent

2N3055

2N5631 equivalent

sec tip41c

TRANSISTOR BC 384

Transistor 2sC1060

MJ11017 equivalent

BU108

pin configuration transistor bd140

BU108

Untitled

bip 373

Untitled