MB81C75-35
Abstract: MB81C75-25 MB81C75
Text: March 1990 Edition 3.0 ~ ~ — DATA S H E E T = cP FUJITSU - - MB81C75-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C75 is a 16,384 words x 4 bits static random access memory
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OCR Scan
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MB81C75-25/-30/-35
64K-BIT
MB81C75
Organizatio1C75-25
MB81C75-30
MB81C75-35
LCC-28C-A03
28-PAD
LCC-28C-A03I
MB81C75-35
MB81C75-25
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PDF
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Untitled
Abstract: No abstract text available
Text: MB85402-30 MB85W2-40 FUJI 'S TS255-B88Y Nov. 1988 CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36—pin ceramic board.
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OCR Scan
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MB85402-30
MB85W2-40
TS255-B88Y
16-Bit
MB85402
MB81C75
MB81C75,
MB85402-30)
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJI CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36-pin ceramic board. Organized as four 16K x 4 devices, the MB85402 is op
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OCR Scan
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16-Bit
MB85402
MB81C75
36-pin
MB81C75,
MB85402-30)
MB85402-40)
MB85402-30
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PDF
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Untitled
Abstract: No abstract text available
Text: FU 31 CMOS 16,384 Words x 32-Bit HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85414 is a fully decoded, CHOS static random access memory module consists of nine MB81C75A devices mounted on a 64-pin plastic board. Organized as eight 16K x 4 devices, the MB85414 is
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OCR Scan
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32-Bit
MB85414
MB81C75A
64-pin
16-bit
MB81C75A,
MB85414-30)
MB85414-40)
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PDF
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Untitled
Abstract: No abstract text available
Text: May 1990 FUJITSU PRODUCT PROFILE MB85414-30/-40 CMOS STATIC RAM MODULE 16384 Words x 32-Bit The Fujitsu MB85414 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C75 devices mounted on a 64-pin Epoxy module. These modules incorporate a presence detect feature that
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OCR Scan
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MB85414-30/-40
32-Bit
MB85414
MB81C75
64-pin
MZP-64P-P01
32-Bit
DQ16-DQ19
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PDF
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mzp e 002 42 05
Abstract: mzp a 002 44 05 MZP a 002 47 05 MZP A 002 57 06
Text: FUJITSU MICROELECTRONICS 31E D 374^7^2 001333=5 T H F H I May 1990 Fujitsu PRO D U CT P R O FILE • M B 85415-30/40 CMOS STATIC RAM MODULE 16384 Words x 36-Bit The Fujitsu MB85415 is a fully decoded, CMOS static random access memory module SRAM with nine MB81C75 devices mounted on a 70-pln
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OCR Scan
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36-Bit
MB85415
MB81C75
70-pln
16384x
36-Bit
B85415-30
B85415-40
0D13342
mzp e 002 42 05
mzp a 002 44 05
MZP a 002 47 05
MZP A 002 57 06
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PDF
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Untitled
Abstract: No abstract text available
Text: March 1990 Édition 3.0 FUJITSU DATA SHEET MB81C 7 5 -25/-30/-3S CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory Tha Fujitsu MB81C75 is a 16,384 words x 4 bits static random aocess memory fabricated with a CMOS silicon gats process. Tha memory uses asynchronous
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OCR Scan
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MB81C
-25/-30/-3S
64K-BIT
MB81C75
MB81C75-25
MB81C75-90
MB81C75-35
24-LEAO
EMP-24P-MQ3)
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 374^2 31E D 0013335 S M ay 1990 T - I FMI C, - X } - f FUJITSU P R O D U C T PRO FILE MB85414-30/-40 CMOS STATIC RAM MODULE 16384 Words x 32-Bit The Fujitsu MB85414 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C75 devices mountedon a 64-pin
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OCR Scan
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MB85414-30/-40
32-Bit
MB85414
MB81C75
64-pin
24--D
D028-D
64-Lead
MZP-64P-P01)
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PDF
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Untitled
Abstract: No abstract text available
Text: May 1990 FUJITSU P R O D U C T P R O F IL E • MB85415-30/40 CMOS STATIC RAM MODULE 16384 Words x 36-Bit The Fujitsu MB85415 is a fully decoded, C M O S static random access memory module SRAM with nine MB81C75 devices mounted on a 70-pin Epoxy module. Additionally, these modules incorporate a presence detect
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OCR Scan
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MB85415-30/40
36-Bit
MB85415
MB81C75
70-pin
36-Bit
MB85415-40
MB85415-30/-40
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PDF
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Untitled
Abstract: No abstract text available
Text: im su 16K X MB85414-30 MB85414-40 32 CMOS SRAM MODULE TS260- A 8 8 Y Nov. 1988 CMOS 16,384 Words x 32-Bit HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fuji t s u MB85414 is a fully decoded, CMOS static r a ndom access memory m o dule consists of nine MB81C75A
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OCR Scan
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MB85414-30
MB85414-40
TS260-
32-Bit
MB85414
MB81C75A
64-pin
16-bit
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PDF
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MB81C75
Abstract: No abstract text available
Text: May 1990 FUJITSU PRODUCT PROFILE- M B 85402-30/40 CMOS STATIC RAM MODULE 16384 Words x 16-Bit The Fujitsu MB85402 is a fully decoded, CMOS static random access \ memory modu le SRAM with four MB81C75 devices mounted on a 36-pin ceramic module. Organized as four 16K x 4 devices, the MB85402 is
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OCR Scan
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16-Bit
MB85402
MB81C75
36-pin
16-Bit
Supply13
B85402-40
MB85402-30
MB85402-40
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PDF
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81c75
Abstract: MB81C75 MB81C75-25
Text: CMOS 65,536-BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C75-25 MB81C75-35 February 191 E d itio n 2.0 1 6 K x 4 B I T 6 5 , 5 3 6 - B IT H IG H S P E E D S T A T IC R A N D O M A C C E S S M E M O R Y W IT H A U T O M A T IC P O W E R D O W N The Fujitsu M B 8 1 C 7 5 is a 16,384-words by 4-bits static random access
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OCR Scan
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536-BIT
MB81C75-25
MB81C75-35
384-words
81C75
28PLC
C28009S-1C
MB81C75
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 374*^2 31E D 0013331 S May 1990 I FMI T"~44-'23-/V- FUJITSU PRODUCT p r o f i l e : MB85402-30/40 CMOS STATIC RAM MODULE 16384 W ords X 16-Bit The Fujitsu MB85402 is a fully decoded, CMOS static random access O memory module SRAM with four MB81C75 devices mountedon a 36-pin 1
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OCR Scan
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23-/V-
MB85402-30/40
16-Bit
MB85402
MB81C75
36-pin
16-Bit
B85402-30
B85402-40
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PDF
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Untitled
Abstract: No abstract text available
Text: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high
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OCR Scan
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TS270â
MB82B75
384-words
300mil
24P-M03
C24062S-1C
MB82B74-15
MB82B74-20
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PDF
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IMS1630
Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68
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OCR Scan
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AM2147
AM2148/9
AM2167
AM2168
AM9126
AM99C68
AM99C88
AM99C89
AM67C4501
AM67C4502
IMS1630
HY62256
SGS-Thomson
HITACHI HM6116
DALLAS SEMICONDUCTOR Ds1235
MK4503
hm6116 cross
UPD4361
SSM7188
MK4501
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PDF
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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OCR Scan
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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PDF
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STATIC RAM 8464
Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)
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OCR Scan
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L7C167
L7C168
L7C170
L7C171
L7C172
L6116/
L6116L
L7C183
CY7C183
L7C184
STATIC RAM 8464
IMS1433
SSM6116
IMS1630
SSM6171
SSM7188
hitachi selection guide
SSM7164
hm6264
ic 6116 ram
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PDF
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IDT71961L-15
Abstract: IDT71981L-55 IDT71981L-70 IDT71981S-45 IDT71981S-55 IDT71981S-70 IDT71982L-45 IDT71982L-55 IDT7198L35 MB81C75-25
Text: - 76 6 4 K -Í X m % CC y CMOS -f- y 7 TAAC max ns) TCAC max (ns) TOE max (ns) TOH min (ns) TOD max (ns) TWP min (ns) 20 S t a t i c RAM ( 1 6 3 8 4 x 4) m tî 1$ TDS rain (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N 6 4 E 4 À
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OCR Scan
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16384X4)
4PIN64E4
IDT7198L35
IDT71961L-15
IDT71981L-55
IDT71981L-70
M5M5189AP-25
M5M5189AP-35
M5M5189BP/J-15
M5M5189BP/J-20
IDT71981S-45
IDT71981S-55
IDT71981S-70
IDT71982L-45
IDT71982L-55
MB81C75-25
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PDF
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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OCR Scan
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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PDF
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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PDF
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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OCR Scan
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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PDF
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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OCR Scan
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static
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OCR Scan
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65536-BIT
MB82B75-1B
MB82B75-20
TS270-A893
MB82B75
384-words
30Qmil
C24G62S-1C
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PDF
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philips diode PH 33J
Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without
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Original
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10-BIT
QS3L384)
QS3L2384
QS3L384
QS3L2384
philips diode PH 33J
UM61256FK-15
sem 2106 inverter diagram
IDT7024L70GB
um61256
UM61256ak sram
um61256fk15
HIGH VOLTAGE ISOLATION DZ 2101
C5584
IDT74LVC1G07ADY
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PDF
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