M5M5V216AWG Search Results

Contextual Info: MITSUBISHI LSIs revision-P02, ' 98.05.12 M5M5V216AWG PRELIMINARY N o tic e : T h is is n o t a fin a l s p e c ific a tio n . S o m e p a r a m e tr ic lim its a r e s u b je c t t o c h a n g e 2097152-BIT 131072-WQRD BY 16-BIT CMOS STATIC RAM FEATURES

M5M5V216A

Abstract: M5M5V216AWG
Contextual Info: MITSUBISHI LSIs revision-01, ' 98.12.08 M5M5V216AWG 2097152-BIT 131072-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5V216A is a family of low voltage 2-Mbit static RAMs organized as 131,072-words by 16-bit, fabricated by Mitsubishi's high-performance 0.25µm CMOS technology.

Contextual Info: MITSUBISHI LSIs r e v is io n - 0 1 . ' 9 8 . 1 2 . 0 8 M5M5V216AWG 2097152-B IT 131072-W O R D B Y 16-BIT CM O S STA TIC RAM DESCRIPTION FEATURES The M5M5V216A is a family of low voltage 2-Mbit static RAMs organized as 131,072-words by 16-bit, fabricated by Mitsubishi's

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

sram card 60 pin mitsubishi

Abstract: m5m51008c M5M5408
Contextual Info: L-41001-0E MITSUBISHI ELECTRIC Mitsubishi Low Power SRAM Technical Direction 256K 512K 1M 2M 4M 8M 16M Large Capacity Low Power SRAM High Speed Power down current 5.0V±0.5V : 55ns 256K : XL ver. 2µA max. 2.7V~3.6V : 85ns 70ns/55ns 1M : XL ver. 4µA max.

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM