IRFF12 Search Results

Contextual Info: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFF122

Abstract: IRFF123
Contextual Info: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

100V 60A Mosfet

Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
Contextual Info: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING

Contextual Info: IRFF120 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

Contextual Info: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate

IRFF121

Abstract: IRFF120 IRFF122 IRFF123
Contextual Info: D E | 3Ö7SDÖ1 0D1ASS4 7 f □ 1 3875081 6 E SOLID STATE 0 1E 18254 D T-ïf-O l - Standard Power M OSFETs IRFF120, IRFF121, IRFF122, IRFF123 File Number 1563 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode

SFN106B9

Abstract: DS0026 IRFF121 3909
Contextual Info: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T | . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology

IRFF120

Abstract: JANTX2N6788 JANTXV2N6788 n-channel, 70v, 60a 4.5V to 100v input regulator
Contextual Info: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International

IRFF121

Abstract: IRFF120 IRFF12
Contextual Info: FIT IRFF120’121 6.0 AMPERES 100, 60 VOLTS RDS(ON = 0.3 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

OA 161 diode

Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7
Contextual Info: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:

sfn106a9

Contextual Info: 8368602 § SOL ITRQN l i t r 0 n - D E V IC E S , INC. D E V IC ES INC kl PE [ f l 3 b f l i3D5 □□□□350 ^ _ | T-39-09 SFN106A9 POWER MOS DEVICE 100V/6A N Channel, TO-39 Package, IRFF120 Equivalent The new Solitron Power MOS technology combines the efficient

IR 60A, 100V Mosfet

Abstract: IRFF120 90426C JANTX2N6788 JANTXV2N6788 100V 60A Diode
Contextual Info: PD - 90426C IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF120 BVDSS 100V RDS(on) 0.30Ω ID 6.0A  The HEXFET technology is the key to International

IRFF120

Abstract: TB334
Contextual Info: IRFF120 Data Sheet January 2002 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING

I22R

Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R
Contextual Info: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated

Contextual Info: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International

mosfet 4430

Abstract: FF121R 4431 mosfet
Contextual Info: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*

IRFF120

Abstract: TB334
Contextual Info: IRFF120 Data Sheet March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET 1563.3 Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

1RFF120

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF120 IRFF123 Advance Information S m all-S ig nal Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N-CHANNEL TMOS POWER FETs rDS on = 0-3 OHM 100 VOLTS rDS(on) = 0.4 OHM 60 VOLTS . . . desig n ed fo r lo w vo ltag e , high speed p o w e r sw itch in g

Contextual Info: IRFF120R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ

F111

Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
Contextual Info: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR

Contextual Info: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current

IRFF122

Abstract: ANA1-20
Contextual Info: 8 368602 SOL ITRON DEVICES INC hi fl3bflb DS DD0D2flfl fc, | S o litro n _ T-39-09 SFN10GC9 D E V I C E S , IIMC. POWER MOS DEVICE 1 0 0 V /5 A N Channel, TO-39 Package, IRFF122 Equivalent The new Solitron Power MOS technology combines the