JANTXV2N6788 Search Results

IRFF120

Abstract: JANTX2N6788 JANTXV2N6788 n-channel, 70v, 60a 4.5V to 100v input regulator
Contextual Info: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International

Contextual Info: SCF2N6788T2 JANTX2N6788 JANTXV2N6788 REF: MIL-PRF-19500/555 POWER MOSFET FOR RUGGED ENVIRONMENTS TO-205AF / TO-39 •    DESCRIPTION N-Channel 100 Volt < 0.300 Ohms 6 Amp SEMICOA’s MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA’s long heritage providing military grade technology and packaging allows these devices to be

IR 60A, 100V Mosfet

Abstract: IRFF120 90426C JANTX2N6788 JANTXV2N6788 100V 60A Diode
Contextual Info: PD - 90426C IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF120 BVDSS 100V RDS(on) 0.30Ω ID 6.0A  The HEXFET technology is the key to International

Contextual Info: I p| j - 0 p n C | t Ì O n Q I Provisional Data Sheet No. PD-9.426B IOR Rectifier JANTX2N6788 HEXFET POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N -CHANNEL Product Summarf Part Number BVdss 100 Volt, 0.30 2 HEXFET HEXFET technology is the key to International

Contextual Info: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International

JANTX2N6788

Abstract: IRFF120 JANTXV2N6788 100V 60A Diode IR 60A, 100V Mosfet
Contextual Info: Provisional Data Sheet No. PD-9.426B HEXFET JANTX2N6788 POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N-CHANNEL Ω HEXFET 100 Volt, 0.30Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

IRFF120

Abstract: JANTX2N6788 JANTXV2N6788 100V 60A Mosfet
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.426B HEXFET JANTX2N6788 POWER MOSFET JANTXV2N6788 [REF:MIL-PRF-19500/555] [GENERIC:IRFF120] N-CHANNEL Ω HEXFET 100 Volt, 0.30Ω Product Summary HEXFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790

2N6802 JANTX

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60

Contextual Info: in te rn atio n a l Government and Space Products I ö R Rectifier h *0 Port Number R0S on} (fÎ 8V0SS W T f= 2 S <>C (A T >= JB6“C (A) @ ïf ~ 2 5 ° C (W) Fu on Demand Number Cose Outline Key Hermetic Packages HEXFET Power MOSFETs TO-205AF (TO-39) N-Channel

IRFF320

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numbtr BVDSS 2 (3) (Vdn) R0S(on) (Ohm) N)0 TC-2S* (Amp«} Iq O Tc-IOB* (Amp*) Pq O Tc*2F (Watts) Fax-onDemand Number Case Style, (Case Outline) (1) HEXFET Power MOSFETf Hermetic Package, N- a n d P-Channel

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete