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    IRFD224 Search Results

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    IRFD224 Price and Stock

    Vishay Siliconix IRFD224

    MOSFET N-CH 250V 630MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD224 Tube
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    Vishay Siliconix IRFD224PBF

    MOSFET N-CH 250V 630MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD224PBF Tube 1
    • 1 $2.03
    • 10 $1.299
    • 100 $2.03
    • 1000 $0.63996
    • 10000 $0.63996
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    International Rectifier IRFD224

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFD224 300
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    Vishay Intertechnologies IRFD224PBF

    Transistor: N-MOSFET; unipolar; 250V; 630mA; Idm: 5A; 1W; HVMDIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRFD224PBF 1
    • 1 $0.772
    • 10 $0.521
    • 100 $0.414
    • 1000 $0.386
    • 10000 $0.372
    		Get Quote

    IRFD224 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD224 International Rectifier HEXFET Power Mosfet Original PDF
    IRFD224 International Rectifier HEXFET Power Mosfet Original PDF
    IRFD224 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD224 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 630MA 4-DIP Original PDF
    IRFD224 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD224PBF International Rectifier HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1 Ohm , ID = 0.63A) Original PDF
    IRFD224PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 630MA 4-DIP Original PDF

    IRFD224 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD224 08-Mar-07

    IRFD224

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 18-Jul-08 IRFD224

    7105

    Abstract: IRFD120
    Text: PD- 95923 IRFD224PbF • Lead-Free www.irf.com 1 10/29/04 IRFD224PbF 2 www.irf.com IRFD224PbF www.irf.com 3 IRFD224PbF 4 www.irf.com IRFD224PbF www.irf.com 5 IRFD224PbF 6 www.irf.com IRFD224PbF www.irf.com 7 IRFD224PbF Hexdip Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRFD224PbF IRFD120 7105 IRFD120

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 2002/95/EC 18-Jul-08

    IRFD224_RC, SiHFD224_RC

    Abstract: IRFD224
    Text: IRFD224_RC, SiHFD224_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFD224 SiHFD224 AN609, CONFIGURA-Oct-10 0426m 8968m 4501m 6212m IRFD224_RC, SiHFD224_RC

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HEXDIP Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD224, SiHFD224 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFD120

    Abstract: No abstract text available
    Text: PD- 95923 IRFD224PbF • Lead-Free Document Number: 91132 10/29/04 www.vishay.com 1 IRFD224PbF Document Number: 91132 www.vishay.com 2 IRFD224PbF Document Number: 91132 www.vishay.com 3 IRFD224PbF Document Number: 91132 www.vishay.com 4 IRFD224PbF Document Number: 91132


    Original     		PDF IRFD224PbF IRFD120 IRFD120

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HEXDIP Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD224, SiHFD224 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 2002/95/EC 11-Mar-11

    IRFD224

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω


    Original     		PDF IRFD224 IRFD224

    IRFD224

    Abstract: 90165
    Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD224 12-Mar-07 IRFD224 90165

    IRFD224

    Abstract: No abstract text available
    Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFD224 RFD224 IRFD224

    Untitled

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    10Kf6 diode

    Abstract: ir2155 40w electronic ballast IR2155 equivalent T106-26 IR2151 DT 94-3 self oscillating Electronic ballast 40W 10KF6 ir2155 design tips IR2111 APPLICATIONS transistor IRF 630
    Text: Application Notes AN-995A Electronic Ballasts Using the Cost-Saving IR215X Drivers Introduction Electronic ballast circuits have recently undergone a revolution in sophistication from the early bipolar designs of ten years ago. This has been brought about


    Original     		PDF AN-995A IR215X IR2151 IR2111 IRF820 1N4007 10DF6 250VAC T106-26 EE-30Z 10Kf6 diode ir2155 40w electronic ballast IR2155 equivalent T106-26 IR2151 DT 94-3 self oscillating Electronic ballast 40W 10KF6 ir2155 design tips IR2111 APPLICATIONS transistor IRF 630

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


    Original     		PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    Untitled

    Abstract: No abstract text available
    Text: International PD91272 ^Rectifier_ IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V DSS = 2 5 0 V ^D S o n = 1 - 1 ^


    OCR Scan     		PDF IRFD224

    fu110

    Abstract: No abstract text available
    Text: I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS V B%SS Draln-to-Source BreakdownVoltage (Volt. Part Number RDSfon) On-State Resistance (Ohms) iQContinuous Drain Current 100* C 25* C (Amps) (Amps) RthJC Max Thermal Resistance row) PdOTo 2S“C


    OCR Scan     		PDF O-251AA IRFD9014 IRFD9024 IRFD9110 IRFD9120 IRFD9210 IRFD9220 IRFU4105 IRFU014 IRFU024N fu110