HYM536410 Search Results

HYM536410MG

Contextual Info: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling

HY5117400B

Abstract: HY514100A
Contextual Info: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

HYM536410AMG

Abstract: hym536410am HY5117400A HY514100A
Contextual Info: HYM536410A M-Series 4Mx36-bit CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted for each DRAM. The HYM536410AM / ASLM / ATM /

Z0301

Contextual Info: •HYUNDAI HYM53641 OB Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22pF decoupling capacitor is mounted for each DRAM.

bt dof

Contextual Info: •HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling

HYM536410CM

Contextual Info: -HYUNDAI - • HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM m odule consisting o f eight H Y5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

Contextual Info: »HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The H YM 53641O A is a 4M x 36-bit Fast page m ode C M O S D R A M module consisting of eight H Y 5 1 17400A in 24/26 pin S O J or T S O P IIa n d four H Y514100A in 20/26 pin S O J or T S O P II on a 72 pin glass-epoxy printed circuit board.

HYM536410AMG

Contextual Info: “H Y U N D A I H Y M 5 3 6 4 1 0 A M - S e r ie s 4Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410A is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy

Contextual Info: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.

HYM536410

Abstract: HY5117400C HY514100A HYM536410C HYM536410CM HYM536410CMG 4MX36
Contextual Info: HYM536410C M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410C M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

HYM536410

Abstract: HYM536410MG HYM53
Contextual Info: • H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 4 1 0 S e r ie s 4M x 36-bit c m o s d r a m m o d u l e PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode C M O S DRAM module consisting of eight H Y5117400 in 24/28 pin SO J and four HY514100A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2fyF decoupling

5B33

Abstract: MJ002 HYM536410 HY5117400A HYM53641OAMG
Contextual Info: -HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY5141 OOAin 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.

HYM536410AM70

Abstract: KMM5364103AK-6 KMM53632000AKA-60 KMM53632000AK-6U KMM5364103AK-70 KMM53632000AK6 KMM5362003C-60 4MX36 KMM53616000AK 16MX36
Contextual Info: Page 1 12/09/97 AP450GX MP Server System 12/9/97 The following tables list SIMM/DIMM devices known to be compatible with the specified Intel platforms. In general, SIMM devices, which are faster than those specified for a given platform, will work although no extra performance will be realized. The memory devices

HYM532814

Abstract: TRA8 L HYM536410 HYM532100AM HYM532100
Contextual Info: TIMING DIAGRAM INDEX E D O 4-Byte SIMM HYM532124AW HYM532224AW . . . . . . 1Mx32 EDO 2Mx32 EDO 2Mx32 EDO 1Mx 16 based . . . . . 1Mx 16 based . . . . . 2Mx8 based . . . . . EDO TIMING DIAGRAM -1 EDO TIMING DIAGRAM -1 . .

Hyundai 2MX32 EDO simm module

Abstract: HYM532814 HYM53681 HYM5V72A3204
Contextual Info: «HYUNDAI QUICK REFERENCE MODE ORGANIZATION 8M Bytes 2Mx32 BASE PART NO. SPEED R£F. 1Mx16 HYM532224AW/AWG 60/70/80 1K 5V HYM532224CW/CWG 6G/7Q/80 1K 5V HYM532214AE/AEG 60/70/80 2K 5V EDO 2Mx8 FP 4Mx32 EDO VOLT. AVAIL. HYM532214CE/CEG 60/70/80 2K 5V HYM53241OAM/AMG

HYM53641

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM 536410 B S e rie s 4M X 36-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM53641 OB is a 4M x 36-blt Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

HY5118160JC

Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
Contextual Info: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM