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    G40N6 Search Results

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    G40N6 Price and Stock

    onsemi HGTG40N60A4

    IGBT 600V 75A TO247-3
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    DigiKey HGTG40N60A4 Tube 450
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    HGTG40N60A4 Tube
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    Newark HGTG40N60A4 Bulk 450
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    Bristol Electronics HGTG40N60A4 2
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    New Advantage Corporation HGTG40N60A4 90 1
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    Rochester Electronics LLC HGTG40N60C3

    75A, 600V, N-CHANNEL IGBT
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    DigiKey HGTG40N60C3 Bulk 50
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    onsemi HGTG40N60B3

    IGBT 600V 70A 290W TO247
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    Ameya Holding Limited HGTG40N60B3 684
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    Rochester Electronics LLC HGTG40N60C3R

    75A, 600V N-CHANNEL IGBT
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    DigiKey HGTG40N60C3R Bulk 45
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    onsemi SHGTG40N60A4

    SHGTG40N60A4
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    G40N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G40N60

    Abstract: G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812
    Text: TO-3PF Tube Packing Data TO-3PF Tube Packing Configuration: Figure 1.0 30 units per Tube Packaging Description: F G40N60UF 113 Bubble Sheet 12 Tubes per box TO-3PF parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in


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    PDF G40N60UF 570x150x48 590x330x245 KA7812-AE IMSYS777 A710103105 G40N60 G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812

    40n60c3

    Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
    Text: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E


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    PDF G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


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    PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3

    G40N60B3

    Abstract: No abstract text available
    Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Text: G40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678

    G40N60

    Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
    Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
    Text: G40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


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    PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n

    HGTG40N60B3 equivalent

    Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
    Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
    Text: G40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060

    G40N60

    Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
    Text: G40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt TA49052 HGTG40N60B3 LD26 RHRP3060 45UH
    Text: G40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating


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    PDF HGTG40N60B3 O-247 160ns 150oC HGTG40N60B3 150oC. G40N60 g40n60b3 g40n60b g40n60b3 igbt TA49052 LD26 RHRP3060 45UH

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g40n60b3d

    Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
    Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGT1Y40N60B3D HGT1Y40N60B3D 150oC. TA49052. TA49063. g40n60b3d G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 RHRP3060 TA49063

    G40N60B3

    Abstract: G40N60
    Text: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
    Text: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


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    PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
    Text: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b

    G40N60

    Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
    Text: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
    Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    OCR Scan
    PDF HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052

    G40N60

    Abstract: g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 HGTG40N60B3 LD26 110CI
    Text: in t e G40N60B3 r r ii J a n u a ry . D ata S h eet m 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan
    PDF HGTG40N60B3 HGTG40N60B3 TA49052. O-247 G40N60 g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 LD26 110CI