FRF450 Search Results

P-Channel mosfet 400v

Abstract: 2E12 3E12 FRF450D FRF450H FRF450R Rad Hard in Fairchild for MOSFET
Contextual Info: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: JANSR2N7298 Formerly FRF450R4 Semiconductor Data Sheet Radiation Hardened, N-Channel Power MOSFET The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

Contextual Info: FRF450R2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

1291H

Abstract: ILM12
Contextual Info: H A RR IS S E M I C O N D SE CT OR S6E D HARRIS • 4 3 0 2 27 1 0 0 4 5 7 5 3 lbfl « H A S ¿IV SHififU, 2N 7298R 2N7298H u -, S E M IC O N D U C T O R REGISTRATION PENDING Currently Available as FRF450 D, R, H December 1992 R adiation Hardened N -C hannel Pow er M OSFETs

2E12

Abstract: 3E12 FRF450D FRF450H FRF450R
Contextual Info: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Rad hard MOSFETS in Harris

Abstract: 655u
Contextual Info: FRF450D, FRF450R, FRF450H Semiconductor 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FRF450R1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 9A, 500V, RDS on = 0.615Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

la 4290

Abstract: 1E14 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as

2N7298D

Contextual Info: Œk H U U a r r is S E M I C O N D U C T O R 2N7298D, 2N7298R 2N72QQH REGISTRATION PENDING Currently Available as FRF450 D, R, H . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 9A, 500V, RDS(on) >0.6150 TO-254AA • Second Generation Rad Hard MOSFET Retults From New Design Concept*

Contextual Info: FRF450R4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: FRF450D1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 9A, 500V, RDS on = 0.615Q. TO-254AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)

2N7298R

Abstract: 2E12 2N7298D 2N7298H 3E12 400v mosfet
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF450 D, R, H 2N7298D, 2N7298R 2N7298H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 9A, 500V, RDS(on) = 0.615Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: FRF450D3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: FRF450D2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

1E14

Abstract: 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet [ /Title JANS R2N72 98 /Subject (Radiation Hardened, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Radiation Hardened, NChannel Power MOSFET) /Creator () Radiation Hardened, N-Channel Power

Contextual Info: FRF450R3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)9 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

diode A249

Abstract: 2E12 3E12 SFFD450M SFFR450M frf450 irfm7450
Contextual Info: S I PRELIMINARY SFFR450M SFFD450M SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 10 AMP 500 VOLTS 0.60 Q RADIATION HARDENED N-CHANNEL MOSFET # Designer’s Data Sheet FEATURES: SFFR450M: 100KRad(Si) Gamma

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

2N7292

Abstract: 2N7298 2N7294
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 July 2008. INCH-POUND MIL-PRF-19500/605C 16 April 2008 SUPERSEDING MIL-PRF-19500/605B 4 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080