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    BD329 Price and Stock

    Bimba Manufacturing Company TBD-3290-M

    Actuator, Twin Bore, dbl end, 32mm Bore; Stroke: 90mm; Metric Customary Units ( | Bimba TBD-3290-M
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    RS TBD-3290-M Bulk 5 Weeks 1
    • 1 $676.1
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    Bimba Manufacturing Company TBD-3290-E

    Actuator, Twin Bore, dbl end, 32mm Bore; Stroke: 90mm; US Customary Units (Inch | Bimba TBD-3290-E
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    RS TBD-3290-E Bulk 5 Weeks 1
    • 1 $660.06
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    SMC Corporation of America MDBD32-95Z

    CYLINDER, TIE ROD, MB-Z SERIES | SMC Corporation MDBD32-95Z
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    RS MDBD32-95Z Bulk 5 Weeks 1
    • 1 $144.84
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    Bimba Manufacturing Company TBD-3290-MX

    Actuator, Twin Bore, dbl end, 32mm Bore; Stroke: 90mm; Metric Customary Units ( | Bimba TBD-3290-MX
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    RS TBD-3290-MX Bulk 5 Weeks 1
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    Bimba Manufacturing Company TBD-3295-EM

    Actuator, Twin Bore, dbl end, 32mm Bore; Stroke: 95mm; US Customary Units (Inch | Bimba TBD-3295-EM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS TBD-3295-EM Bulk 5 Weeks 1
    • 1 $693.05
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    BD329 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD329 Philips Semiconductors NPN GENERAL PURPOSE POWER TRANSISTORS Original PDF
    BD329 Philips Semiconductors NPN power transistor Original PDF
    BD329 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD329 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD329 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD329 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD329 Unknown Cross Reference Datasheet Scan PDF
    BD329 Unknown Transistor Replacements Scan PDF
    BD329 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD329 Philips Semiconductors SILICON PLANAR EPITAXIAL POWER TRANSISTOR Scan PDF
    BD329 Siemens NPN SILICON PLANAR TRANSISTOR Scan PDF
    BD329 Siemens NPN SILICON PLANAR TRANSISTOR Scan PDF
    BD329/BD330 Infineon Technologies NPN Silicon Planar Transistor Scan PDF

    BD329 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAR 745 TRANSISTOR

    Abstract: transistor BD329 BD329 BD330 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD329 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 07 Philips Semiconductors Product specification NPN power transistor


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    PDF M3D100 BD329 O-126; BD330. MAM254 SCA53 117047/00/02/pp8 MAR 745 TRANSISTOR transistor BD329 BD329 BD330 BP317

    c2611

    Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
    Text: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO


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    PDF O-126 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SC3417 BD437 BD238 c2611 BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2n2222a SOT23

    Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE


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    PDF SC04/CATEGORY SC-59 OT143 OT323 OT363 SC-75 OT223 BC107 BC108 BC109 2n2222a SOT23 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23

    STK411-230E

    Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    BD329

    Abstract: BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744
    Text: BD329 J V s. SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P -N -F com plem ent is BD330. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A


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    PDF BD329 OT-32 BD330. O-126 OT-32) 003434b QQ34347 BD329 BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744

    b0330

    Abstract: BD330 Transistors BD330 BD329 A03435 BD329/BD330 transistor BD330
    Text: BD330 J V_ S IL IC O N PLANAR EPITAXIAL PO W ER T RA N SISTO R P -N -P tr a n s is to r in a S O T -32 p la stic envelope intended fo r c a r -r a d io output sta g e s. N 'P -N com plem ent is BD329. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A


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    PDF BD330 OT-32 BD329. O-126 OT-32) b0330 BD330 Transistors BD330 BD329 A03435 BD329/BD330 transistor BD330

    b0330

    Abstract: No abstract text available
    Text: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0


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    PDF BD330 OT-32 BD329. Lti53T31 7Z62126 bbS3131 D0343S3 B0330 b0330

    Untitled

    Abstract: No abstract text available
    Text: BD329 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied. Q UICK REFERENCE D A TA C o lle c to r-e m itte r voltage VgE - 0


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    PDF BD329 OT-32 BD330. bbS3T31 0D34344 003H3HS DD34347

    bd330

    Abstract: No abstract text available
    Text: BD329 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N - I’ -N tr a n s is to r in a SO T-32 p la s tic package, intended fo r c a r -radio output stages. P-N -P co m p lem en t is BD330. M atch ed p a irs can be supplied. Q UICK REFERENCE D A T A


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    PDF BD329 BD330. BD329/BD330 bd330

    BD329/BD330

    Abstract: BD329 BD330
    Text: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.


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    PDF BD329 OT-32 BD330. O-126 OT-32) T-33-07 711005b BD329/BD330 BD329 BD330

    bd330

    Abstract: bd329
    Text: BD329 PHILIPS INTERNATIONAL SbE D 7110A2b 004E67D ^76 M P H I N • T " 3 3 ' 0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P-N tra n s is to r in a S O T -3 2 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied.


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    PDF BD329 7110A2b 004E67D BD330. 711055b T-33-07 BD329 bd330

    transistor k58

    Abstract: No abstract text available
    Text: BD330 J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P- N - P t r a n s is to r in a SO T-32 p la s tic package intended fo r c a r- rn d io output stages. N - P-N co m p lem en t is BD329. M atch ed p a ir s can be supplied. Q U IC K R E F E R E N C E D A T A


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    PDF BD330 BD329. /BD330 transistor k58