945 MOSFET N Search Results

945 MOSFET N Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET

945 MOSFET N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF
transistor d 945 Abstract: 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n Text: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET ARCHIVE INFORMATION • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP	Original	MRF9030 MRF9030LSR1 transistor d 945 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB	Original	MRF9045N MRF9045NBR1	PDF
102N06 Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product	Original	500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX	PDF
c 945 TRANSISTOR equivalent Abstract: 9601 mosfet 9450 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device	Original	MRF9045MR1 c 945 TRANSISTOR equivalent 9601 mosfet 9450 transistor	PDF
RF-35-0300 Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	Cha41 MRF9030MR1 RF-35-0300 9601 mosfet 9450 transistor motorola MOSFET 935	PDF
945 mosfet n Abstract: 93F2975 c17 dual mos 9450 transistor 52169 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it	Original	MRF9060MBR1 945 mosfet n 93F2975 c17 dual mos 9450 transistor 52169	PDF
MRF9045MR1 Abstract: TO270 Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device	Original	MRF9045MR1/D MRF9045MR1 MRF9045MR1 TO270	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device	Original	MRF9045M/D MRF9045M MRF9045MR1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device	Original	MRF9045MR1/D MRF9045MR1	PDF
us 945 mosfet Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9030M/D MRF9030MR1 us 945 mosfet	PDF
93F2975 Abstract: transistor WB1 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D	PDF

MARKING WB1 Abstract: 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060 MRF9060LSR1 MRF9060S T491D106K035AT Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9060LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9060LSR1 MRF9060 MARKING WB1 945 mosfet n 945 TRANSISTOR marking us capacitor pf l1 marking Z4 ATC100B470JT500XT MRF9060LSR1 MRF9060S T491D106K035AT	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9030 Rev. 8, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030 MRF9030LR1	PDF
MARKING WB1 Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT Text: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9060 MRF9060LR1 MARKING WB1 ATC100B0R5BT500XT ATC100B470JT500XT MRF9060LR1 MRF9060S T491D106K035AT	PDF
945 TRANSISTOR Abstract: marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02 Text: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 8, 9/2008 RF Power Field Effect Transistor MRF9030LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030 MRF9030LR1 945 TRANSISTOR marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N	PDF
MRF9030N Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9030N MRF9030NR1 MRF9030N 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9045N MRF9045NR1	PDF
MRF9045N Abstract: 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045 Text: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9045N MRF9045NR1 MRF9045N 945 TRANSISTOR AN1955 EB212 MRF9045MR1 MRF9045NR1 A113 6020G marking wb2 MRF9045	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9060N MRF9060NR1 MRF9060N	PDF
Motorola 0936 Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP Text: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of this device	OCR Scan	945rola, X34873Q-2 MRF184/D Motorola 0936 305 Power Mosfet MOTOROLA 173 MHz RF CHIP	PDF

945 MOSFET N Search Results

945 MOSFET N Result Highlights (5)

945 MOSFET N Datasheets Context Search

MRF9030N

transistor d 945

Untitled

102N06

c 945 TRANSISTOR equivalent

RF-35-0300

945 mosfet n

MRF9045MR1

Untitled

Untitled

us 945 mosfet

93F2975

Untitled

Untitled

MARKING WB1

Untitled

MARKING WB1

945 TRANSISTOR

MRF9030N

MRF9030N

Untitled

MRF9045N

Untitled

Motorola 0936