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    TO270 Price and Stock

    Bivar Inc TO-27-060

    SPACER TUBULAR GEN PURP 0.060"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TO-27-060 Bag 1,000
    • 1 -
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    • 100 -
    • 1000 $0.05453
    • 10000 $0.05453
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    Mouser Electronics TO-27-060
    • 1 $0.1
    • 10 $0.085
    • 100 $0.08
    • 1000 $0.054
    • 10000 $0.054
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    Newark TO-27-060 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.083
    • 10000 $0.066
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    RS TO-27-060 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.068
    • 10000 $0.068
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    Bivar Inc TO-27-070

    Circuit Board Hardware - PCB Dis-O-Pad TO-27 Round .29 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-27-070
    • 1 $0.12
    • 10 $0.083
    • 100 $0.063
    • 1000 $0.048
    • 10000 $0.043
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    Bivar Inc TO-27-040H

    Circuit Board Hardware - PCB Dis-O-Pad TO-27 Round .29 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-27-040H
    • 1 $0.19
    • 10 $0.14
    • 100 $0.106
    • 1000 $0.081
    • 10000 $0.073
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    Bivar Inc TO-27-050

    Circuit Board Hardware - PCB Dis-O-Pad TO-27 Round .29 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-27-050
    • 1 $0.19
    • 10 $0.14
    • 100 $0.106
    • 1000 $0.081
    • 10000 $0.073
    		Get Quote

    Bivar Inc TO-27-050H

    Circuit Board Hardware - PCB Dis-O-Pad TO-27 Round .29 in OD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TO-27-050H
    • 1 $0.19
    • 10 $0.14
    • 100 $0.106
    • 1000 $0.081
    • 10000 $0.073
    		Get Quote
    Find more TO270 price and stock on Findchips.com

    TO270 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-27-030 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-27-030 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-27-040H Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-27-050 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-27-050 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-27-050H Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-27-060 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-27-060 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-27-070 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-27-070 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF

    TO270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN3789

    Abstract: TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL
    Text: TO270WB TO270WBL Clamping Device The TO270WB and the TO270WBL are clamping devices designed to provide improved thermal and electrical performance for RF Power Transistors. Based on the recommendations in the Freescale Semiconductor Application Note AN3789, the TO270WB and TO270WBL are built to work


    Original     		PDF O270WB O270WBL O270WB O270WBL AN3789, AN3789 O-270, TO270WB WB-14 T0272 TO272* APPLICATION TO-270 TO272 TO270 270WBL

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    Untitled

    Abstract: No abstract text available
    Text: 2705 Cord Sets www.schurter.com/pg07_2 OU T Interconnection Cord with IEC Plug A, Angled A 70° C Description References Weblinks Interconnection Cord, Protection class I, Pin temperature 70 °C, Cable Approvals General Product Information, Approvals, RoHS, CHINA-RoHS, Mating


    Original     		PDF com/pg07 E45116 250VAC; 1min/50Hz) RAL9005 RAL7001 to2705 to2705

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		PDF MD7IC2251N MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1

    MRF6S19060N

    Abstract: No abstract text available
    Text: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF6S19060N IS--95 MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with


    Original     		PDF MRF6V3090N MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    MMG3014N

    Abstract: No abstract text available
    Text: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup


    Original     		PDF MMG3014N MMG3014N

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B

    MRF6S21060N

    Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 MRF6S21060N CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1

    ATC600F241JT250XT

    Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT09MS031N O-270-2 AFT09MS031NR1 AFT09MS031NR1 AFT09MS031GNR1 13ogo, 8/2012Semiconductor, ATC600F241JT250XT GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT inductor 50 NH GRM31CR61H106KA12

    C5750JF1H226ZT

    Abstract: AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955 MRF6V4300NR1
    Text: Document Number: MRF6V4300N Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 C5750JF1H226ZT AN3263 C3225JB2A105KT tdk MRF6V4300N MRF6V4300NBR1 JESD22-A113 Resistor mttf C3225JB2A105KT AN1955

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: RFMD . RFMD0014/2014 Direct Quadrature Modulators The RFMDx014 is a high-linearity, direct quadrature modulator designed for use in cellular base stations and other communications systems. The RFMDx014 modulators support cellular, 3G, WiMAX, and LTE air interface standards. Manufactured using an advanced


    Original     		PDF RFMD0014/2014 RFMDx014 24-pin -10dBm RFMD0014 RFMD2014 24-pin, RFMD0014/2014

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    J771

    Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N

    AN3263

    Abstract: MRF6V4300N AN1955 MRF6V4300NBR1 MRF6V4300NR1 C3225JB2A105KT
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large-signal output and driver applications with


    Original     		PDF MRF6V4300N MRF6V4300NR1 MRF6V4300NBR1 MRF6V4300NR1 AN3263 MRF6V4300N AN1955 MRF6V4300NBR1 C3225JB2A105KT

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN^TECHNICAL 34E D □77340^ GQQG721 T • ATC f i ¡cap MID-K DIELECTRIC SERIES Ç ATC Millimeter Wavelength 111 and 116 Series MID-K ■;* , p : DIELECTRIC -I ?CAP. VALUES FR O M ; 2.7 pF to 270 pF / Microcaps® for RF/Microwave Applications H¡“T &


    OCR Scan     		PDF GQQG721 111YEA 111ZEA101-100-111YEA 0111YEA 111ZE 111YEA181-1Q0- 111ZEA221

    TO-270

    Abstract: RU11
    Text: F ZONE J -c1 1 A1 DATUM PLANE r i l Il 1 1—d - - 1— i 1 1— 1— i - 1— f - 1 : j i — 1 1 — E5 — F R E E S C A L E SEMICONDUCTOR, ALL R I G H T S RESERVED. i V 1 A 1 2X A2 NOTE 7 ^— 1- 1 INC. TITLE: TO—2 7 0 SURFACE MOUNT MECHANICAL OUTLINE


    OCR Scan     		PDF 98ASH98117A O-270 5M-1994. 98ASH98117A TO-270 RU11