ATC100B0R5BT500XT Search Results

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

303 2170 001

Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

ATC 1084

Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to

J365

Abstract: TLC 3391 ATC100B150JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to

transistor j241

Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

C4532X5R1H475MT

Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
Contextual Info: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

ATC100B390JT500XT

Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

CRCW12064701FKTA

Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This

CRCW08054701FKEA

Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage

LTE impedance tuner

Abstract: MRF8HP21080 CW12010T0100G MRF8HP21080HR3 J952 j179 j934 CW12010T0100GBK J9-22 j922
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

AN1907

Abstract: AN1977 AN1987 MW6IC1940NB MW6IC1940NBR1 1329A-03 AN3789 J1213
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-2 Rev. 4.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage

J771

Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range

AN3263

Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical

mrf8s21140hs

Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491
Contextual Info: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies

RF1000LF

Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21080H Rev. 0, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21080HR3 MRF7S21080HSR3 Designed for CDMA base station applications with frequencies from 2110 to