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Kyocera AVX Components 100B0R6BT500XT Silicon RF Capacitors / Thin Film 500volts 0.6pF
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Mouser Electronics	100B0R6BT500XT		19			1 $8.2 10 $6.11 100 $4.96 1000 $4.21 10000 $4.21	Buy Now

ATC100B0R6BT500XT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
303 2170 001 Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies	Original	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3	PDF
transistor j241 Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448 Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448	PDF
C5750X5R1H106MT Abstract: MRF7S21210HS S2116 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116	PDF
AFT21S230S Abstract: aft21s232s C5750X7S2A106M Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3 aft21s232s C5750X7S2A106M	PDF
HSR6 Abstract: IRL96 J637 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 0, 10/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies	Original	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HSR6 MRF8S21200H HSR6 IRL96 J637	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 0, 10/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 2, 10/2010 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6	PDF
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 MRF7S21210HR3	PDF
AN1955 Abstract: MRF8S21200HR6 MRF8S21200HSR6 J197 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 2, 10/2010 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 AN1955 MRF8S21200HSR6 J197	PDF
AFT21S230SR3 Abstract: C5750X7S2A106M NI-780S-6 NI-780 542w Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3 C5750X7S2A106M NI-780S-6 NI-780 542w	PDF
232272461009 Abstract: PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 MRF7S21210HR3 232272461009 PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35	PDF