HSR6 Search Results

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

303 2170 001

Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: ANALOG DEVICES Mixed-Signal Processor with Host Interface Port ADSP-21 msp50A/55A/56A FEATURES 77 ns Instruction Cycle Time from 13.00 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM 1K Words of On-Chip Data Memory RAM

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 HSR6 Designed for CDMA and multicarrier GSM base station applications with

Contextual Info: HSR-634WT S W I T C HI N G T HE S M A R T WAY HSR-634WT Leistungs-Wechslerkontakt Elektrische Daten @ 25 °C Kontaktform Features C Kontaktmaterial Leistungswechsler mit Wolframkontakten W* Schaltleistung max. Schaltspannung max. W / VA 100 VDC 120 VAC 120

ATC600F0R1BT250XT

Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

NI-1230-4H

Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 HSR6 Designed for W-CDMA and LTE base station applications with frequencies

MIPS26

Abstract: adsp21msp59 HA20 27C512 DIL
Contextual Info: A N A LO G ► D E V IC E S FEATURES 38 ns Instruction Cycle Tim e 26 MIPS from 13.00 MHz Crystal ADSP-2100 Family Code and Function Com patible w ith N ew Instruction Set Enhanced for Bit Manipulation Instructions, M ultiplication Instructions, Biased Rounding, and Global Interrupt Masking

ATC100B390JT500XT

Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 HSR6 Designed for CDMA and multicarrier GSM base station applications with

TSE 4041

Abstract: ADSP-21msp56a PGA300 msp50 ADSP-21msp55A ADSP-21msp50 001C 27C64 80C51 HA20
Contextual Info: ► ANALOG DEVICES Mixed-Signal Processor with Host Interface Port ADSP-21 msp50A/55A/56A FEATURES 77 ns Instruction Cycle Time from 13.00 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM 1K Words of On-Chip Data Memory RAM

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

intel 27C512

Abstract: HA20
Contextual Info: a BACK DSP Microcomputer ADSP-2171/ADSP-2172/ADSP-2173 FEATURES 30 ns Instruction Cycle Time 33 MIPS from 16.67 MHz Crystal at 5.0 V 50 ns Instruction Cycle Time (20 MIPS) from 10 MHz Crystal at 3.3 V ADSP-2100 Family Code & Function Compatible with New Instruction Set Enhancements for Bit Manipulation Instructions, Multiplication Instructions, Biased

MRF6VP3450H

Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

250GX-0300-55-22

Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

HSR-830RT

Abstract: HSA-12027 HSR-156WT HSR-069RT HSR-630RT HSR-190RT HSR-502R HSR-1015 HSR-910WT HSR-0025DT
Contextual Info: 1529-2012:QuarkCatalogTempNew 9/10/12 5:58 PM Page 1529 17 Reed Switches, Proximity Sensors and Accessories B C B C B A RoHS C1 C2 Fig. B Fig. A Fig. C A Highest quality reed switches feature contacts hermetically sealed in a protective atmosphere. Protected contacts mean reliable operation in wet, oily, dirty — even explosive — environments. Glass capsule size ranges from a compact 2" glass length down to

e4571

Abstract: EDR0 161 TMP 6101 w1853 FASM935 FASM935S FFR500 INC935 f9952a fujitsu fr-v
Contextual Info: FUJITSU SEMICONDUCTOR CM71-00204-3E CONTROLLER MANUAL FR-V FAMILY SOFTUNE TM ASSEMBLER MANUAL for V6 FR-V FAMILY SOFTUNE TM ASSEMBLER MANUAL for V6 FUJITSU LIMITED PREFACE • Purpose of this manual and target readers This manual describes the functions and operations of the Fujitsu SOFTUNE Assembler operating on

addressing modes in adsp-21xx

Abstract: addressing modes of adsp 21xx processors direct addressing mode in adsp-21xx adsp 21xx addressing mode WRITE A PROGRAM OF ADDITION OF TWO NUMBERS type register ADSP-2100 ADSP-2111 ADSP-2171 ADSP-2181
Contextual Info: Programming Model 12.1 12 OVERVIEW From a programming standpoint, the ADSP-21xx processors consist of three computational units, two data address generators, and a program sequencer, plus on-chip peripherals and memory that vary with each processor. Almost all operations using these architectural components

C4532X7RIH685K

Abstract: ATC600F1R0BT250XT AN1955 J373
Contextual Info: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

DB3-5D

Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 HSR6 Designed for CDMA and multi - carrier base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

Contextual Info: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 HSR6 Designed for CDMA and multicarrier base station applications with