MRF9030 Search Results

MRF9030MBR1

Abstract: MRF9030MR1 100B7R5JP
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

MRF9030

Abstract: MRF9030LSR1 MRF9030R1
Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030MBR1

Abstract: MRF9030MR1
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

44F3360

Abstract: 93F2975
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

MRF9030L

Contextual Info: Freescale Semiconductor Technical Data MRF9030 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030N

Abstract: 945 TRANSISTOR A113 ATC100B470JT500XT MRF9030NBR1 MRF9030NR1 T491D106K035AT mrf9030n stability
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

MRF9030NR1

Abstract: marking z17 100B470JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

VIPer 32

Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17
Contextual Info: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors

945 TRANSISTOR

Abstract: marking us capacitor pf l1 EB212 MRF9030 MRF9030LR1 marking amplifier j02
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 8, 9/2008 RF Power Field Effect Transistor MRF9030LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MRF9030MBR1

Abstract: MRF9030MR1 TO-270-2
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc.

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 12, 9/2008 RF Power Field Effect Transistor MRF9030NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: Document Number: MRF9030 Rev. 8, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

MRF9030L

Abstract: motorola MOSFET 935 MRF9030 MRF9030LR1 MRF9030LSR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

transistor d 945

Abstract: 945 TRANSISTOR MRF9030 MRF9030LSR1 9450 transistor 945 mosfet n
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET ARCHIVE INFORMATION • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP

Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

TO-270-2

Contextual Info: Freescale Semiconductor Technical Data MRF9030M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

Contextual Info: MRF9030 Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

VIPer 32

Abstract: TO272
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

mrf9030

Contextual Info: MOTOROLA Order this document by MRF9030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices