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    9367 BU Search Results

    9367 BU Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL89367FRTAZ Renesas Electronics Corporation High Speed, Dual Channel, 6A, MOSFET Driver With Programmable Rising and Falling Edge Delay Timers, TDFN, /Tube Visit Renesas Electronics Corporation
    ISL89367FRTAZ-T Renesas Electronics Corporation High Speed, Dual Channel, 6A, MOSFET Driver With Programmable Rising and Falling Edge Delay Timers, TDFN, /Reel Visit Renesas Electronics Corporation
    66429-367LF Amphenol Communications Solutions Quickie® IDC Cable-to-Board Connector System, Eject Latch Header, Right Angle, Through Hole, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    51939-367LF Amphenol Communications Solutions PwrBlade®, Power Connectors, 128S Right Angle Header, Solder To Board Visit Amphenol Communications Solutions

    9367 BU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148


    Original     		PDF 1N4148 1N4448 1N4148 1N914 1N914B 100mA 1N4148â

    BAY80

    Abstract: No abstract text available
    Text: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		PDF BAY80 01-Apr-99 D-74025 BAY80

    1N4148.1N4448

    Abstract: din 4148 1N4148 1N4448 1N914 1N914B
    Text: 1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage


    Original     		PDF 1N4148 1N4448 1N4148 1N914 1N914B D-74025 12-Dec-94 1N4148.1N4448 din 4148 1N4448 1N914 1N914B

    BAY135

    Abstract: BAY13
    Text: BAY135 TELEFUNKEN Semiconductors Silicon Planar Diode Features D Very low reverse current Applications Protection circuits, delay circuits 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Symbol Value Unit Peak reverse voltage, non repetitive


    Original     		PDF BAY135 D-74025 BAY135 BAY13

    BAS33

    Abstract: BAS34
    Text: BAS33.BAS34 Vishay Telefunken Silicon Planar Diodes Features D Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage


    Original     		PDF BAS33 BAS34 BAS33 01-Apr-99 D-74025 BAS34

    Untitled

    Abstract: No abstract text available
    Text: BAT86S VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required 94 9367 Mechanical Data


    Original     		PDF BAT86S DO-35 BAT86S BAT86S-TR BAT86S-TAP 08-Apr-05

    1N4148.1N4448

    Abstract: 1N4148.TR
    Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case


    Original     		PDF 1N4148 1N4448 1N914 1N4448 1N914B DO-35 1N4148-TAP 1N4148.1N4448 1N4148.TR

    1N4150

    Abstract: No abstract text available
    Text: 1N4150 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings


    Original     		PDF 1N4150 TLx25 D-74025 1N4150

    1N4148 equivalent

    Abstract: 1N4148.1N4448 1N914 1N914B 1N4148 1N4448 diode din 4148 din 4148
    Text: 1N4148.1N4448 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage


    Original     		PDF 1N4148 1N4448 1N4148 1N914 1N914B TLx25 D-74025 1N4148 equivalent 1N4148.1N4448 1N914 1N914B 1N4448 diode din 4148 din 4148

    SD103A

    Abstract: SD103B SD103C
    Text: SD103A–SD103C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications 94 9367 HF–Detector Protection circuit


    Original     		PDF SD103A SD103C SD103A IF20mA SD103B SD103B SD103C

    1N4148 telefunken

    Abstract: No abstract text available
    Text: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148


    Original     		PDF 1N4148 1N4448 1N4148 1N914 1N914B 1N4448 100mA 1N4148 telefunken

    BAS33

    Abstract: BAS34
    Text: BAS33.BAS34 TELEFUNKEN Semiconductors Silicon Planar Diodes Features D Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage


    Original     		PDF BAS33 BAS34 BAS33 D-74025 BAS34

    BZX55C

    Abstract: No abstract text available
    Text: BZX55C. TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications 94 9367 Voltage stabilization


    Original     		PDF BZX55C. D-74025 BZX55C

    BAY80

    Abstract: No abstract text available
    Text: BAY80 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		PDF BAY80 1994in D-74025 BAY80

    BAV17

    Abstract: BAV18 BAV19 BAV20 BAV21
    Text: BAV17.BAV21 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current


    Original     		PDF BAV17. BAV21 BAV17 BAV18 BAV19 BAV20 BAV17 BAV18 BAV19 BAV20 BAV21

    BAW75

    Abstract: No abstract text available
    Text: BAW75 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		PDF BAW75 TLx25 D-74025 BAW75

    BAS33

    Abstract: BAS34
    Text: BAS33.BAS34 Vishay Telefunken Switching Diode Features D Silicon Planar Diodes D Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 94 9367 Order Instruction Type BAS33 BAS34 Type Differentiation


    Original     		PDF BAS33 BAS34 BAS33 BAS34 D-74025 14-Feb-01

    BAY135

    Abstract: BAY13
    Text: BAY135 Vishay Telefunken Silicon Planar Diode Features D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage


    Original     		PDF BAY135 18-Mar-99 D-74025 BAY135 BAY13

    Untitled

    Abstract: No abstract text available
    Text: BA282/BA283 VISHAY Vishay Semiconductors Band Switching Diodes Features • • • • Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9367 Band switching in VHF-tuners Mechanical Data


    Original     		PDF BA282/BA283 DO-35 BA282 BA283 BA282-TR BA282-TAP BA283-TR BA283-TAP 08-Apr-05

    BAW27

    Abstract: No abstract text available
    Text: BAW27 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications High speed switch and general purpose use in computer and industrial applications 94 9367 Absolute Maximum Ratings


    Original     		PDF BAW27 TLx25 D-74025 BAW27

    1N4154

    Abstract: 1N4154 telefunken
    Text: 1N4154 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		PDF 1N4154 TLx25 D-74025 1N4154 1N4154 telefunken

    BAW75

    Abstract: 85550
    Text: BAW75 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 Extreme fast switches Order Instruction Type BAW75 Type Differentiation VRRM = 35 V Ordering Code BAW75–TAP Remarks Ammopack Absolute Maximum Ratings


    Original     		PDF BAW75 BAW75 D-74025 14-Feb-01 85550

    BAW75

    Abstract: No abstract text available
    Text: BAW75 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 Extreme fast switches Order Instruction Type BAW75 Type Differentiation VRRM = 35 V Ordering Code BAW75–TAP Remarks Ammopack Absolute Maximum Ratings Tj = 25_C


    Original     		PDF BAW75 BAW75 D-74025 14-Feb-01

    Untitled

    Abstract: No abstract text available
    Text: BZX55-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization


    Original     		PDF BZX55-Series DO-35 08-Apr-05