BAY80 Search Results

Contextual Info: Te m ic BAY80 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purpose Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current t p= l iS Repetitive peak forward current

10 35 DIODE

Abstract: BA217 BAY71 BY 236 BA128 BA129 BA130 BA218 BA316 BA317
Contextual Info: NATL SEMICOND DISCRETE 11E D I b S D llB Q UÜ37 Jib! 4 m This Material Copyrighted By Its Respective Manufacturer This Diode Pro Electron Series Material z > Diode Pro Electron Series Continued Part No. Copyrighted BAY19 BAY71 BAY72 BAY73 BAY74 BAY80 BAY82

BAY80

Contextual Info: BAY80 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80–TAP BAY80–TR Remarks Ammopack Tape and Reel Absolute Maximum Ratings

Contextual Info: BAY80 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diode Applications General purpose Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options: TR / 10 k per 13 " reel 52 mm tape , 50 k/box

Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

BAY80

Abstract: BAY80-TAP BAY80-TR DO35
Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purpose 94 9367 Mechanical Data

BAY80

Contextual Info: BAY80 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80–TAP BAY80–TR Remarks Ammopack Tape and Reel Absolute Maximum Ratings

Contextual Info: _ BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose y Absolute Maximum Ratings Tj = 25° C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current

BAY80

Abstract: BAY80-TAP BAY80-TR DO35
Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purpose 94 9367 Mechanical Data

Contextual Info: BAY80 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 120 V • Repetitive peak reverse voltage: max. 150 V • Repetitive peak forward current: max. 625 mA. 1.00 (25.4)

Contextual Info: BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS

Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Diode BAY 80

Abstract: BAY72 Diode BAY 72 34696 BAY80 BAY 80 diode
Contextual Info: FAIRCH IL D SE MI CO NDU CTO R S4 i F| DaBTBlb E J~- 3469 674 T A I R C H I U D ”SE MI C O N D U C T O R g g fg g ^ T S 84D 27296 BAY72/BAY80 - A Schlum berger C om pany T. PACKAGES BAY72 BAY80 ABSOLUTE MAXIMUM RATINGS N ote 1) T e m p e ra tu re s S torage Tem perature Range

Contextual Info: BAY80 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • • • • • • Switching speed: max. 50 ns General application Continuous reverse voltage: max. 120 V Repetitive peak reverse voltage: max. 150 V Repetitive peak forward current: max. 625 mA.

BAY80

Abstract: DO-204AH
Contextual Info: BAY80 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 120 V • Repetitive peak reverse voltage: max. 150 V • Repetitive peak forward current: max. 625 mA. • Pb / RoHS Free

BAY80

Contextual Info: BAY80 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diode Applications General purpose Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options: TR / 10 k per 13 " reel 52 mm tape , 50 k/box

diode 334

Abstract: BAY80
Contextual Info: N AUER PHILIPS/DISCRETE □TE D • IAPX tbS3R31 DQ2b37fl 712 BAY80 I GENERAL PURPOSE DIODE S ilicon planar ep itaxial diode in D O -3 5 envelope; intended fo r switching and general purposes in industrial eq u ip m e n t e.g. oscilloscopes, digital voltm eters and video o u tp u t stages in c o lo u r television.

BAY80

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification General purpose diode BAY80 FEATURES

BAY80

Abstract: ulm28 103fd 50N13
Contextual Info: Philips Semiconductors Product specification General purpose diode BAY80 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAY80 is a switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

BAY80

Abstract: MAM246 Diode BAY80
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification General purpose diode BAY80 FEATURES DESCRIPTION • Hermetically sealed leaded glass

Contextual Info: Tem ic BAY80 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Type Repetitive peak reverse voltage Reverse voltage Peak forward surge current tD= l|ts

Contextual Info: BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS

Contextual Info: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21