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    1001r1bn

    Abstract: 130Q APT1001R3BN diode 1000V
    Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® APT1001R1BN APT901R1BN APT1001R3BN 901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V

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    Abstract: No abstract text available
    Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q 901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD

    APT901R3BN

    Abstract: APT1001R3BN
    Text: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN 901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN /1001R3BN O-247AD

    SML1001R1BN

    Abstract: APT901R1BN 1001R1BN SML1001R3BN SML901R1BN SML901R3BN APT901R
    Text: SEMELAB t>OE PLC - 01 3 3 1 0 7 O O O O b ü O 73S « S m B D MOS POWER 4 SML1001R1BN 1000V 10.5A 1.1 OQ SML901R1BN 900V 10.5A 1.1 OQ SML1001R3BN 1000V 10.0A 1.3012 901R3BN 900V 10.0A 1.3012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF SML1001R1BN SML901R1BN SML1001R3BN SML901R3BN 901R1BN 1001R1 901R3BN 1001R3BN O-247AD APT901R1BN 1001R1BN APT901R

    APT1001R1BN

    Abstract: APT901R1BN 1001R3BN 1001r1bn
    Text: A d v a n ced ROW ER Te c h n o l o g y o D O S POWER MOS IV< APT1001R1BN APT901R1BN APT1001R3BN 901R3BN 1000V 900V 1000V 900V 10.5 A 10.5 A 10.0A 10.0 A 1.10Q 1.10Q 1.3012 1.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1 901R3BN 1001R3BN 100mS APT10 1001r1bn