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    KEMET Corporation SCR19XV-100-1R1A009JV

    CMC 500UH 10A 2LN TH AEC-Q200
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    DigiKey SCR19XV-100-1R1A009JV Tray 211 1
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    KEMET Corporation SCR19XV-100-1R1A009JH

    CMC 500UH 10A 2LN TH AEC-Q200
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    DigiKey SCR19XV-100-1R1A009JH Tray 198 1
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    KEMET Corporation SCT19XV-100-1R1A009JH

    CMC 300UH 10A 2LN TH AEC-Q200
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    DigiKey SCT19XV-100-1R1A009JH Tray 137 1
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    Mouser Electronics SCT19XV-100-1R1A009JH 89
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    RS SCT19XV-100-1R1A009JH Bulk 21 Weeks 35
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    KEMET Corporation SCT19XV-100-1R1A009JV

    CMC 300UH 10A 2LN TH AEC-Q200
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    DigiKey SCT19XV-100-1R1A009JV Tray 84 1
    • 1 $8.51
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    Mouser Electronics SCT19XV-100-1R1A009JV 67
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    Newark SCT19XV-100-1R1A009JV Bulk 42 1
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    KEMET Corporation SCF19XV-100-1R1A009JV

    CMC 1MH 10A 2LN TH AEC-Q200
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    DigiKey SCF19XV-100-1R1A009JV Tray 69 1
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    Mouser Electronics SCF19XV-100-1R1A009JV 541
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    Newark SCF19XV-100-1R1A009JV Bulk 174 1
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    1001R1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SML1001R1AN

    Abstract: SML1001R3AN SML901R1AN SML901R3AN Power Diode 1000V
    Text: 1001R1AN SML901R1AN SML1001R3AN SML901R3AN SEME LAB 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W TO3 Package Outline. Dimensions in mm Inches POWER MOS IV N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated)


    Original
    PDF SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 901R1AN 1001R1AN 901R3AN 1001R3AN SML1001R1AN SML1001R3AN SML901R1AN SML901R3AN Power Diode 1000V

    1001R1AN

    Abstract: No abstract text available
    Text: 1001R1AN SML901R1AN SML1001R3AN SML901R3AN SEME LAB 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W TO3 Package Outline. Dimensions in mm Inches POWER MOS IV N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated)


    Original
    PDF SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 901R1AN 1001R1AN 901R3AN

    Untitled

    Abstract: No abstract text available
    Text: 1001R1AN SML901R1AN SML1001R3AN SML901R3AN S EM E LA B 1000V 900V 1000V 900V 9.5A 9.5A 8.5A 8.5A 1.10W 1.10W 1.30W 1.30W TO3 Package Outline. Dimensions in mm Inches POWER MOS IV N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated)


    Original
    PDF SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 901R1AN 1001R1AN 901R3AN 1001R3AN SML1001R3AN

    1001r1bn

    Abstract: APT1001R-18NR APT1001RBNR APT1001R1BNR
    Text: O D O S A d van ced R o w er Te c h n o lo g y APT1001RBNR 1000V 11.0A 1.00Q APT.1001R1BNR 1000V 10.5A 1.10D POWER MOS IV® UIS RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd *0M V GS VGSM po 1J' ‘ STG


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    PDF APT1001RBNR APT1001R-18NR APT1001R1BNR APT1001R/1001R1 O-247AD 1001r1bn APT1001R-18NR

    APT1001R1HN

    Abstract: APT1001R3HN APT901R1HN APT901R3HN
    Text: A DVANCE D POUER T EC H N O L OG Y b lE D • A D 02S7101 V A N DDOOBäl C E M43 H A V P D POW ER Te c h n o l o g y * 1001R1HN APT901R1HN APT1001R3HN APT901R3HN POWER MOS IV 1000V 900V 1000V 900V 9.5A 9.5A 9.0A 9.0A 1.10Q 1.10Q 1.30Q 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF 02S11 APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901r1hn 1001r1hn 901r3hn 1001r3hn HGURE13,

    443h

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y 1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901R1HN 1001R1HN 901R3HN 1001R3HN LinearPT1001R1/1001R3HN RGURE11, 443h

    APT1001R1AN

    Abstract: APT1001R3AN
    Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y 1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF APT1001R1AN APT901R1 APT1001R3AN APT901R3AN 901R1AN 1001R1 901R3AN 1001R3AN O-204AA)

    APT1001R1BNR

    Abstract: 1001R1
    Text: A dvanced P ow er Te c h n o lo g y O ü * 'W APT1001RBNR 1000V 11.0A 1.00U 1001R1BNR 1000V 10.5A 1.100 S t R m o s AVALANCHE RATED r ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ^DM V GS V GSM PD V sTG All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1001RBNR APT1001R1BNR 001R1Ö -100m O-247AD 1001R1

    1001r1bn

    Abstract: 130Q APT1001R3BN diode 1000V
    Text: ADVANCED PO W ER Te c h n o lo g y O D O S POWER MOS IV® 1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0A 10.0A 1.100 1.10Q 1.30Q 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN O-247AD 130Q diode 1000V

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P o w er Te c h n o lo g y D 1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.


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    PDF APT1001RBNR APT1001R1BNR APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD 0001S7T

    APT1001RBNR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.


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    PDF APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD

    cop313l

    Abstract: skc 1c COP413L 413L SKE 4F COP400 CQP413L C0P313L COP313L-XXX/N
    Text: C0P413L/COP313L g g National Semiconductor COP413L/COP313L Single Chip Microcontrollers General Description Features The COP413L and COP313L Single-Chip N-Channel Micro­ controllers are members of the COPS tm family, fabricated using N-channel, silicon gate MOS technology. These Con­


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    PDF COP413L/COP313L COP413L COP313L 413L/COP skc 1c 413L SKE 4F COP400 CQP413L C0P313L COP313L-XXX/N

    SML1001R1BN

    Abstract: APT901R1BN 1001R1BN SML1001R3BN SML901R1BN SML901R3BN APT901R
    Text: SEMELAB t>OE PLC - 01 3 3 1 0 7 O O O O b ü O 73S « S m B D MOS POWER 4 1001R1BN 1000V 10.5A 1.1 OQ SML901R1BN 900V 10.5A 1.1 OQ SML1001R3BN 1000V 10.0A 1.3012 SML901R3BN 900V 10.0A 1.3012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF SML1001R1BN SML901R1BN SML1001R3BN SML901R3BN 901R1BN 1001R1 901R3BN 1001R3BN O-247AD APT901R1BN 1001R1BN APT901R

    210 RBN

    Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
    Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q 1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg


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    PDF APT1001RBNR APT1001R1BNR O-247AD 210 RBN 1001r1bn 1001RBN NA 1001 OA 10 diode APT1001 1001R1BNR

    SML1001R1HN

    Abstract: ltls SM 686 16V SML1001R3HN SML901R1HN SML901R3HN TO-258AA Package 1001R1HN plc158 LTLs TO-52
    Text: SEflELAB PLC bOE T> m 0133107 = V r= GG0QÛ50 Q22 « S M L B MOS POWER 4 T * 3 ^ I5 SEME 1001R1HN SML901R1HN SML1001R3HN SML901R3HN LAB 1000V 9.5A 900V 9.5A 1000V 9.0A 900V 9.0A 1.10Q 1.10Q 1.3012 1.30Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF 901R1HN 1001R1HN 901R3HN 1001R3HN O-258AA SML1001R1HN ltls SM 686 16V SML1001R3HN SML901R1HN SML901R3HN TO-258AA Package plc158 LTLs TO-52

    01-3316

    Abstract: No abstract text available
    Text: SEMELAB PLC bOE T> m 013316? 000D73D 3S3 • S M L B INI _ i s MOS POWER = V r= IN I ä 1001R1AN 1000V 9.5A 1.1 Oft SML901R1AN 900V 9.5A 1.1 OQ SML1001R3AN 1000V 8.5A 1.30Q SML901R3AN 900V 8.5A 1.3012 SEM E LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF 000D73D SML1001R1AN SML901R1AN SML1001R3AN SML901R3AN 901R1AN 1001R1 901R3AN 1001R3 100mS 01-3316

    801r2dn

    Abstract: 5530DN 35M4 SML551R3DN 4520D SML902RDN 7516-D 5025DN 4065d SML5085DN
    Text: SEM E LA B PLC bOE J> • 0 1 3 3 10 7 □ □ □ 0 5 ‘iE 63^ ■ SHLB 'T - y\ - l ^ ELECTRICAL SPECIFICATIONS FOR SEMELAB MOS POWER 4 DICE MOS POWER DIE SIZE 104 199 X 204 MILS 4 9 / DIE PACK 105 290 X 250 (MILS) 2 5 /D IE PACK 106 254 X 414 (MILS) 6 0 /D IE


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    PDF 1004RDN SML904RDN 802R4DN 752R4DN SML601R3DN SML551R3DN 49/DIE SML5085DN SML4585DN 4065DN 801r2dn 5530DN 35M4 4520D SML902RDN 7516-D 5025DN 4065d