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Microchip Technology Inc APT10M19SVRG MOSFET N-CH 100V 75A D3PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10M19SVRG	Tube	741		1	1 $13.22 10 $13.22 100 $10.75 1000 $10.75 10000 $10.75	Buy Now
Onlinecomponents.com	APT10M19SVRG					1 - 10 $12.84 100 $10.89 1000 $10.3 10000 $10.3	Buy Now
Microchip Technology Inc APT10090BLLG MOSFET N-CH 1000V 12A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10090BLLG	Tube	301		1	1 $16.82 10 $16.82 100 $13.6625 1000 $13.6625 10000 $13.6625	Buy Now
Verical	APT10090BLLG		15		1	1 $16.73 10 $16.73 100 $13.63 1000 $13.63 10000 $13.63	Buy Now
Arrow Electronics	APT10090BLLG		15	26 Weeks	1	1 $16.73 10 $16.73 100 $13.63 1000 $13.63 10000 $13.63	Buy Now
Microchip Technology Inc APT10SCD120K DIODE SIL CARB 1.2KV 10A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10SCD120K	Tube	297		1	1 $11.06 10 $7.653 100 $5.7304 1000 $5.7304 10000 $5.7304	Buy Now
Microchip Technology Inc APT100GT120JU2 IGBT MOD 1200V 140A 480W SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT100GT120JU2	Bulk	184		1	1 $40.24 10 $40.24 100 $33.525 1000 $33.525 10000 $33.525	Buy Now
Onlinecomponents.com	APT100GT120JU2					1 - 10 $49.81 100 $35.88 1000 $35.88 10000 $35.88	Buy Now
Microchip Technology Inc APT10021JFLL MOSFET N-CH 1000V 37A ISOTOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT10021JFLL	Tube	60		1	1 $101.2 10 $101.2 100 $82.1375 1000 $82.1375 10000 $82.1375	Buy Now
TME	APT10021JFLL				1	1 $147.68 10 $116.34 100 $116.34 1000 $116.34 10000 $116.34	Get Quote
Vyrian	APT10021JFLL		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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APT10 Datasheets (343)

Part	Manufacturer	Description	Datasheet Type	PDF
APT1001	Advanced Power Technology	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs	Original	PDF
APT1001R1AVR	Advanced Power Technology	POWER MOS V 1000V 9A 1.100 Ohm	Original	PDF
APT1001R1AVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT1001R1BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1001R1BN	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10.5A TO247AD	Original	PDF
APT1001R1BNR	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF
APT1001R1BVFR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT1001R1DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF
APT1001R1HN	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF
APT1001R1HVR	Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET	Original	PDF
APT1001R1HVR	Unknown	High Voltage, 1000V 8.4A, MOS-FET N-Channel enhanced	Original	PDF
APT1001R1SN	Advanced Power Technology	Power MOS IV	Scan	PDF
APT1001R3BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1001R3HN	Advanced Power Technology	High Voltage Power MOSFETs	Scan	PDF

APT1001R6BFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT1001R6BFLL	Microsemi	Power MOS 7 Low Loss FREDFET	Original	PDF
APT1001R6BFLLG	Advanced Power Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 8A TO-247	Original	PDF
APT1001R6BLL	Advanced Power Technology	POWER MOS 7 MOSFET	Original	PDF
APT1001R6BN	Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET	Original	PDF
APT1001R6SFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF

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APT10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT10035LLL Abstract: APT100GT120JRDL Text: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.	Original	PDF	APT100GT120JRDL E145592 APT10035LLL
APT10026JFLL Abstract: No abstract text available Text: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT10026JFLL OT-227 APT10026JFLL
APT10086BVFR Abstract: No abstract text available Text: APT10086BVFR 1000V POWER MOS V 13A 0.860Ω Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10086BVFR O-247 O-247 APT10086BVFR
APT100DQ60 Abstract: APT100GT60LRG APT100GT60LR Text: APT100GT60B2R G APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.	Original	PDF	APT100GT60B2R APT100GT60LR 50KHz O-247 APT100DQ60 APT100GT60LRG
APT10086BLC Abstract: APT10086SLC Text: APT10086BLC APT10086SLC 1000V 13A 0.860W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.	Original	PDF	APT10086BLC APT10086SLC O-247 O-247 APT10086 APT10086BLC APT10086SLC
isotop mosfet 100V Abstract: APT10M11JVRU2 Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch	Original	PDF	APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2
Untitled Abstract: No abstract text available Text: APT10SCE170D Zero Recovery Silicon Carbide Schottky Die PRODUCT APPLICATIONS PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Power Factor Correction PFC • Higher Reliability Systems • Minimizes or eliminates snubber PRODUCT FEATURES	Original	PDF	APT10SCE170D
APT1004RKN Abstract: APT1004R2KN 1004r Text: D TO-220 G APT1004RKN APT1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS APT1004R2KN APT1004RKN	Original	PDF	O-220 APT1004RKN APT1004R2KN O-220AB APT1004RKN APT1004R2KN 1004r
APT100GF60LR Abstract: IGBT 100A Text: APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 600V Fast IGBT 100A APT100GF60B2R T-Max B2R The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.	Original	PDF	APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 20KHz O-264 O-264 APT100GF60LR IGBT 100A
Untitled Abstract: No abstract text available Text: APT10035JLL 1000V POWER MOS 7TM Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel	Original	PDF	APT10035JLL OT-227
tc 7680 Abstract: No abstract text available Text: APT10026L2FLL 1000V 38A 0.260W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT10026L2FLL O-264 O-264 MIL-STD-750 tc 7680
Untitled Abstract: No abstract text available Text: APT10050JVR 19A 0.500Ω 1000V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10050JVR OT-227 E145592
Untitled Abstract: No abstract text available Text: APT10035B2FLL APT10035LFLL 1000V 28A 0.350W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT10035B2FLL APT10035LFLL O-264 O-264 O-247
APT10M11LVR Abstract: No abstract text available Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR

Untitled Abstract: No abstract text available Text: APT10030L2VR 1000V 33A 0.300W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10030L2VR O-264 O-264
Untitled Abstract: No abstract text available Text: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10M11JVR OT-227 E145592
Untitled Abstract: No abstract text available Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN	OCR Scan	PDF	APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN
Untitled Abstract: No abstract text available Text: APT10050LVR A dvanced P o w er Te c h n o l o g y 1000V 21A 0.500Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™	OCR Scan	PDF	APT10050LVR O-264
APT10M13JNR Abstract: No abstract text available Text: A dvanced P o w er Te c h n o lo g y APT10M13JNR 100V 150A 0.013Û APT10M15JNR 100V 140A 0.015Ü ISOTOP® "UL Recognized" File No. E145592 S POWER MOS IV« AVALANCHE RATED ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS	OCR Scan	PDF	APT10M13JNR APT10M15JNR E145592 APT10M13JNR APT10M15JNR OT-227
APT801R2DN Abstract: APT5085DN Text: ADVANCED POWER TECHNOLOGY Tfl Dlf\| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN	OCR Scan	PDF	APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN
Untitled Abstract: No abstract text available Text: A d v a n ced P o w er Te c h n o l o g y O D APT1004RBNR O S POWER MOS IV« 1000V 4.4A 4.00Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter	OCR Scan	PDF	APT1004RBNR MIL-STD-750 O-247AD
Untitled Abstract: No abstract text available Text: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 APT1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT	OCR Scan	PDF	APT1004RBN APT1004R2BN 1004RBN 1004R2BN APT1004R/1004R2BN O-247AD
apt4020an Abstract: No abstract text available Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN	OCR Scan	PDF	APT1001RAN APT1001R2AN APT9090AN APT901 APT8075AN APT8090AN APT6035AN APT6040AN APT5530AN APT5532AN apt4020an
Untitled Abstract: No abstract text available Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN	OCR Scan	PDF	APT1001R6BN 1001R6BN O-247AD

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APT10 Price and Stock

Microchip Technology Inc APT10M19SVRG

Microchip Technology Inc APT10090BLLG

Microchip Technology Inc APT10SCD120K

Microchip Technology Inc APT100GT120JU2

Microchip Technology Inc APT10021JFLL

APT10 Datasheets (343)

APT10 Datasheets Context Search

APT10035LLL

APT10026JFLL

APT10086BVFR

APT100DQ60

APT10086BLC

isotop mosfet 100V

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APT1004RKN

APT100GF60LR

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tc 7680

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APT10M11LVR

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APT10M13JNR

APT801R2DN

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apt4020an

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