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    APT10M11LVR Price and Stock

    Microchip Technology Inc APT10M11LVRG

    MOSFET N-CH 100V 100A TO264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT10M11LVRG Tube 20 1
    • 1 $39.85
    • 10 $39.85
    • 100 $34.4001
    • 1000 $34.4001
    • 10000 $34.4001
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    Avnet Americas APT10M11LVRG Tube 26 Weeks 20
    • 1 $39.053
    • 10 $39.053
    • 100 $33.189
    • 1000 $32.8486
    • 10000 $32.8486
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    Mouser Electronics APT10M11LVRG
    • 1 $39.85
    • 10 $39.85
    • 100 $39.85
    • 1000 $39.85
    • 10000 $39.85
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    Newark APT10M11LVRG Bulk 20
    • 1 $39.85
    • 10 $39.85
    • 100 $34.4
    • 1000 $32.33
    • 10000 $32.33
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    Microchip Technology Inc APT10M11LVRG
    • 1 $39.85
    • 10 $39.85
    • 100 $34.4
    • 1000 $31.57
    • 10000 $30.53
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    Onlinecomponents.com APT10M11LVRG
    • 1 -
    • 10 $38.8
    • 100 $35.49
    • 1000 $35.49
    • 10000 $35.49
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    TME APT10M11LVRG 1
    • 1 $57.61
    • 10 $45.81
    • 100 $45.81
    • 1000 $45.81
    • 10000 $45.81
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    NAC APT10M11LVRG Tube 9
    • 1 $36.96
    • 10 $36.96
    • 100 $34.04
    • 1000 $31.55
    • 10000 $31.55
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    Richardson RFPD APT10M11LVRG 20
    • 1 -
    • 10 -
    • 100 $34.17
    • 1000 $34.17
    • 10000 $34.17
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    Master Electronics APT10M11LVRG
    • 1 -
    • 10 $38.8
    • 100 $35.49
    • 1000 $35.49
    • 10000 $35.49
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    APT10M11LVR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10M11LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT10M11LVR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    Untitled

    Abstract: No abstract text available
    Text: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF O-264 APT10M1LVR

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: A dvanced W.\A p o w e r Te c h n o lo g y " • R A P T 1 0 M 11 LVR ioov 100a 0.01 i q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF O-264 APT10M1LVR

    Untitled

    Abstract: No abstract text available
    Text: A P T 1 0 M 1 1 LVR A dvanced P o w er Te c h n o lo g y ioov 100a 0.01m POWER M OSV Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF O-264 APT10M1LVR 500yH. O-264AA