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Microchip Technology Inc APT1201R6BVRG MOSFET N-CH 1200V 8A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT1201R6BVRG	Tube			60	1 - 10 - 100 $12.38 1000 $12.38 10000 $12.38	Buy Now
Avnet Americas	APT1201R6BVRG	Tube		26 Weeks	60	1 $12.1324 10 $12.1324 100 $9.93525 1000 $10.10164 10000 $10.10164	Buy Now
Mouser Electronics	APT1201R6BVRG					1 $12.38 10 $12.38 100 $12.38 1000 $12.38 10000 $12.38	Get Quote
Newark	APT1201R6BVRG	Bulk			60	1 $12.38 10 $12.38 100 $10.7 1000 $10.05 10000 $10.05	Buy Now
Microchip Technology Inc	APT1201R6BVRG	Tube		26 Weeks		1 $12.38 10 $12.38 100 $10.7 1000 $9.82 10000 $9.48	Buy Now

Onlinecomponents.com	APT1201R6BVRG					1 - 10 $12.01 100 $10.19 1000 $9.64 10000 $9.64	Buy Now
TME	APT1201R6BVRG				1	1 $18.02 10 $14.35 100 $14.35 1000 $14.35 10000 $14.35	Get Quote
NAC	APT1201R6BVRG				31	1 $11.84 10 $11.84 100 $10.73 1000 $9.82 10000 $9.82	Buy Now
Master Electronics	APT1201R6BVRG					1 - 10 $12.01 100 $10.19 1000 $9.64 10000 $9.64	Buy Now

APT1201R6BVR Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT1201R6BVR		Advanced Power Technology	POWER MOS V 1200V 8A 1.600 Ohm		Original	PDF
APT1201R6BVR		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF
APT1201R6BVR		Motorola	2.0GHz Dual Modulas Prescaler		Scan	PDF

APT1201R6BVR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT1201R6BVR Abstract: No abstract text available Text: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT1201R6BVR O-247 O-247 APT1201R6BVR
APT1201R6BVR Abstract: APT1201R6SVR Text: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT1201R6BVR APT1201R6SVR O-247 O-247 APT1201R6BVR/SVR APT1201R6BVR APT1201R6SVR
Untitled Abstract: No abstract text available Text: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT1201R6BVR APT1201R6SVR O-247 O-247 APT1201R6BVR/SVR Dr065)
APT1201R6BVR Abstract: BAT 545 Text: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.	Original	PDF	APT1201R6BVR O-247 O-247 APT1201R6BVR BAT 545
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	PDF	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original	PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	PDF
nt 6600 G Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700	OCR Scan	PDF	APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
PT1201 Abstract: diode SM I600N Text: A P T 1201 R 6B V R A dvanced P o w er Te c h n o lo g y ' 1200V sa i.600n POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	PDF	O-247 APT1201R6BVR MIL-STD-750 O-247AD PT1201 diode SM I600N
Untitled Abstract: No abstract text available Text: A P T 1 201R 6 B V R ADVANCED W 7Æ P o w e r T e c h n o lo g y sa 1200V i.6oon POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V	OCR Scan	PDF	O-247 APT1201R6BVR MIL-STD-750 O-247AD
Untitled Abstract: No abstract text available Text: A • R W .\A A P T 12 0 1 R 6 B V R dvanced pow er Te c h n o l o g y “ 8a 1200V 1.600Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	OCR Scan	PDF	O-247 APT1201R6BVR