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    8A MARK Search Results

    8A MARK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    8A MARK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M32C/8A Group M32C/8A SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER 1. REJ03B0213-0100 Rev.1.00 Apr 01, 2007 Overview 1.1 Features The M32C/8A Group (M32C/8A) is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group (M32C/8A) is housed in 100pin plastic molded LQFP package.


    Original     		PDF M32C/8A M32C/8A) 16/32-BIT REJ03B0213-0100 M32C/80 100pin

    gp8nc60

    Abstract: No abstract text available
    Text: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)


    Original     		PDF STGB8NC60K STGD8NC60K STGP8NC60K O-220 O-220 gp8nc60

    GP8NC60KD

    Abstract: gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD
    Text: STGB8NC60KD - STGD8NC60KD STGP8NC60KD N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60KD 600V 2.2V 8A STGD8NC60KD 600V 2.2V 8A STGP8NC60KD 600V 2.2V 8A • Lower on voltage drop (Vcesat)


    Original     		PDF STGB8NC60KD STGD8NC60KD STGP8NC60KD O-220 O-220 GP8NC60KD gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD

    gp8nc60

    Abstract: GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGB8NC60K STGD8NC60K
    Text: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)


    Original     		PDF STGB8NC60K STGD8NC60K STGP8NC60K O-220 STGB8NC60K gp8nc60 GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGD8NC60K

    W9NK90Z

    Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
    Text: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z


    Original     		PDF STB9NK90Z STFPNK90Z STP9NK90Z STW9NK90Z O-220 O-247 STB9NK90Z STP9NK90Z STF9NK90Z W9NK90Z p9nk90 W9NK90Z equivalent F9NK90Z P9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220

    P8NM50FP

    Abstract: P8NM50 JESD97 STP8NM50 STP8NM50FP
    Text: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •


    Original     		PDF STP8NM50 STP8NM50FP O-220 O-220FP O-220 P8NM50FP P8NM50 JESD97 STP8NM50 STP8NM50FP

    W9NK90Z equivalent

    Abstract: P9NK90 P9NK90Z mosfet 8A 900V TO-220
    Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z


    Original     		PDF STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z O-220 O-247 STW9NK90Z STF9NK90Z W9NK90Z equivalent P9NK90 P9NK90Z mosfet 8A 900V TO-220

    Untitled

    Abstract: No abstract text available
    Text: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 100% avalanche tested


    Original     		PDF STP8NM50 STP8NM50FP O-220 O-220FP O-220

    FFP08H60S

    Abstract: FFP08H60STU
    Text: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP08H60S FFP08H60S FFP08H60STU

    Untitled

    Abstract: No abstract text available
    Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated


    Original     		PDF STB8NM60D STP8NM60D O-220/D2PAK O-220

    B8NM60D

    Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
    Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated


    Original     		PDF STB8NM60D STP8NM60D O-220/D2PAK O-220 B8NM60D JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters

    P8NM50FP

    Abstract: P8NM50
    Text: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •


    Original     		PDF STP8NM50 STP8NM50FP O-220 O-220FP STP8NM50FP O-220 O-220FP P8NM50FP P8NM50

    P9NK90

    Abstract: w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z STB9NK90Z
    Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET Features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z 900V <1.3Ω


    Original     		PDF STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z O-220 O-247 STB9NK90Z STP9NK90Z P9NK90 w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z

    FFPF08H60STU

    Abstract: FFPF08H60S F08H60S HALF WAVE RECTIFIER CIRCUITS high speed
    Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08H60S FFPF08H60S FFPF08H60STU F08H60S HALF WAVE RECTIFIER CIRCUITS high speed

    W9NK90Z

    Abstract: W9NK90Z equivalent P9NK90 p9nk90z F9NK90Z STP9NK90Z MOSFET 900V 8A TO-220 L9 Zener STF9NK90Z STW9NK90Z
    Text: STP9NK90Z - STF9NK90Z STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK90Z STF9NK90Z STW9NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V 900 V 900 V < 1.3 Ω < 1.3 Ω < 1.3 Ω 8A 8A


    Original     		PDF STP9NK90Z STF9NK90Z STW9NK90Z O-220/TO-220FP/TO-247 STP9NK90Z O-220 O-220FP O-247 W9NK90Z W9NK90Z equivalent P9NK90 p9nk90z F9NK90Z MOSFET 900V 8A TO-220 L9 Zener STF9NK90Z STW9NK90Z

    irf634

    Abstract: st 393 IRF634FP JESD97 IRF63 irf6
    Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 3 2


    Original     		PDF IRF634 IRF634FP O-220 /TO-220FP O-220 O-220FP irf634 st 393 IRF634FP JESD97 IRF63 irf6

    LTC3608

    Abstract: Lead-Acid 6V
    Text: News Release ⎜ www.linear.com 8A, 18V Synchronous Step-Down Regulator Delivers 8A from 7mm x 8mm QFN MILPITAS, CA – August 5, 2008 – The LTC3608 is a high efficiency, synchronous buck regulator that can deliver up to 8A of continuous output current at voltages as low as 0.6V. It


    Original     		PDF LTC3608 Lead-Acid 6V

    IRF634

    Abstract: IRF634FP JESD97
    Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 3 2 1 TO-220


    Original     		PDF IRF634 IRF634FP O-220 /TO-220FP O-220 O-220FP IRF634 IRF634FP JESD97

    Marking 8A

    Abstract: MARK 8A Package Marking .8A MMBZ5226B Marking 8A 2 sot23 marking 8A
    Text: SEMICONDUCTOR MMBZ5226B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8A No. 1 Item Marking Device Mark 8A MMBZ5226B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF MMBZ5226B OT-23 Marking 8A MARK 8A Package Marking .8A MMBZ5226B Marking 8A 2 sot23 marking 8A

    Untitled

    Abstract: No abstract text available
    Text: M32C/8A Group RENESAS MCU 1. REJ03B0213-0111 Rev.1.11 Mar 31, 2009 Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin


    Original     		PDF M32C/8A REJ03B0213-0111 M32C/80 144-pin 100-pin 16-Mbyte

    M308A0SGP

    Abstract: TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U
    Text: M32C/8A Group REJ03B0213-0110 Rev.1.10 Jul 15, 2007 RENESAS MCU 1. Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin


    Original     		PDF M32C/8A REJ03B0213-0110 M32C/80 144-pin 100-pin 16-Mbyte M308A0SGP TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U

    Untitled

    Abstract: No abstract text available
    Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching rrt =45ns(Max. @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @


    Original     		PDF FFPF08H60S FFPF08H60S

    F08S60ST

    Abstract: FFPF08S60STTU
    Text: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU

    Si7114

    Abstract: No abstract text available
    Text: MP38874 8A, 21V, 600KHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP38874 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 8A continuous output


    Original     		PDF MP38874 600KHz MP38874 14-pin MO-229, Si7114