IRF6 Search Results

power MOSFET IRF610

Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

Contextual Info: IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

IRF634

Abstract: IRF634FP
Contextual Info: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3

Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration

IRF640 applications note

Abstract: IRF640 circuit
Contextual Info: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration

IRF610

Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power

CMD8

Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)

Contextual Info: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible  25V max ±20V max l Ultra Low Package Inductance

IRF6714MTR1PBF

Abstract: IRF6714MTRPBF stencil
Contextual Info: PD - 96130A IRF6714MPbF IRF6714MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l RoHs Compliant and Halogen Free  Low Profile <0.6 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

transistor smd c5c

Abstract: transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093
Contextual Info: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;

IRF620

Abstract: IRF620FP
Contextual Info: IRF620 IRF620FP N-CHANNEL 200V - 0.6Ω - 6A TO-220/FP PowerMesh II MOSFET TYPE IRF620 IRF620FP • ■ ■ ■ ■ VDSS RDS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 6A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

IRF646

Abstract: TB334
Contextual Info: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF630M

Abstract: IRF630MFP
Contextual Info: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

Contextual Info: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039

Contextual Info: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040

Contextual Info: PD - 95626 IRF624PbF • Lead-Free Document Number: 91029 8/3/04 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029

Contextual Info: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from

Contextual Info: PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027

Contextual Info: PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET Power MOSFET l D RDS on = 0.435Ω

Contextual Info: IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 3.0 • Ease of Paralleling 7.9 • Simple Drive Requirements Qgd (nC)

IRF614

Contextual Info: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration

IRF6215

Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier

IRF6604

Contextual Info: PD - 94365B IRF6604 HEXFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Power MOSFET

Contextual Info: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V