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IXYS Corporation IXFH80N20Q MOSFET N-CH 200V 80A TO247AD
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IXYS Corporation IXFR80N20Q MOSFET N-CH 200V 71A ISOPLUS247
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IXYS Corporation IXFT80N20Q MOSFET N-CH 200V 80A TO268
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IXYS Corporation IXFK80N20Q MOSFET N-CH 200V 80A TO264AA
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80N20Q Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
80N20Q Abstract: TO264 footprint Text: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	PDF	80N20Q 80N20Q O-247 O-268AA TO264 footprint
ixfh 26 n 49 Abstract: IRM80 Text: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	PDF	80N20Q ixfh 26 n 49 IRM80
DSA003712 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 200 V = 80 A = 28 mW trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 80N20Q 80N20Q O-264 DSA003712
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 200 V = 80 A = 28 mW trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 80N20Q 80N20Q O-264
ISOPLUS247 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings	Original	PDF	80N20Q ISOPLUS247 247T5 ISOPLUS247
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class = 200 V = 80 A = 28 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	PDF	80N20Q 80N20Q O-247 TAB25 O-268
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings	Original	PDF	80N20Q ISOPLUS247
80N20 Abstract: No abstract text available Text: Preliminary Technical Information Extended FBSOA Power MOSFET IXTH1910 IXTT1910 IXTK1910 VDSS ID25 = 200V = 80A Ω ≤ 28mΩ RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	IXTH1910 IXTT1910 IXTK1910 O-247 00A/s, 100ms 80N20
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

Untitled Abstract: No abstract text available Text: □ IXYS HHifl JL æ* X HiPerFET Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, LowQg V^ = 200 V U = R ds ,o„, = trr < 200 ns 80 A 28m Q Preliminary data sheet Maximum Ratings Symbol TestConditions	OCR Scan	PDF	80N20Q
Untitled Abstract: No abstract text available Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q Maximum Ratings Test C onditions VOSS v DQB T j =25°Cto150°C 200 V T j = 25° C to 150° C; RGS= 1 Mi2 200 V v GS v GSM Continuous i2 0 V Transient ±30 V ^D25	OCR Scan	PDF	80N20Q 80N20Q Cto150 O-264 PLUS247TM di/dts100A
Untitled Abstract: No abstract text available Text: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings	OCR Scan	PDF	80N20Q ISOPLUS247TM, Cto150 247TM
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	PDF	67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

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80N20Q Price and Stock

IXYS Corporation IXFH80N20Q

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80N20Q Datasheets Context Search

80N20Q

ixfh 26 n 49

DSA003712

Untitled

ISOPLUS247

Untitled

Untitled

80N20

transistor 12n60c

C1162

sd 20n60

7n60b

7N60B equivalent

C1146

Untitled

Untitled

Untitled

12N60c equivalent

C1218