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    80N20

    Abstract: No abstract text available
    Text: Preliminary Technical Information Extended FBSOA Power MOSFET IXTH1910 IXTT1910 IXTK1910 VDSS ID25 = 200V = 80A Ω ≤ 28mΩ RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTH1910 IXTT1910 IXTK1910 O-247 00A/s, 100ms 80N20