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    80DEG. Price and Stock

    onsemi NCP1080DEG

    IC POE CNTRL 1 CHANNEL 20TSSOP
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    DigiKey NCP1080DEG Tube
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    Avnet Americas NCP1080DEG Tube 0 Weeks, 2 Days 556
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    Flip Electronics NCP1080DEG 1,480
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    Flip Electronics NCP1080DEG

    IC POE CNTRL 1 CHANNEL 20TSSOP
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    DigiKey NCP1080DEG Tube 500
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    SPC Multicomp MP-05EN-80DEG-NC

    Thermostat Switch, Nc, 80Deg C, Flange Rohs Compliant: Yes |Multicomp Pro MP-05EN-80DEG-NC
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    Newark MP-05EN-80DEG-NC Bulk 3,012 1
    • 1 $6.91
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    SPC Multicomp MP-12 80 DEG C

    Thermal Protector, 15A, 125Vac; Product Range:Mp Thermal Circuit Breakers Series; Current Rating:15A; No. Of Poles:-; Voltage Rating Vdc:-; Voltage Rating Vac:125V; Circuit Breaker Mounting:Snap In, Panel Rohs Compliant: Yes |Multicomp Pro MP-12 80 DEG C
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    Newark MP-12 80 DEG C Bulk 1,000 1
    • 1 $1.21
    • 10 $1.09
    • 100 $0.813
    • 1000 $0.708
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    SPC Multicomp MP-23EN-80DEG-NC

    Thermal Switch, Nc, 80Deg C, Flange Rohs Compliant: Yes |Multicomp Pro MP-23EN-80DEG-NC
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    Newark MP-23EN-80DEG-NC Bulk 468 1
    • 1 $12.3
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    • 100 $10.25
    • 1000 $8.41
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    80DEG. Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10SVPS10M

    Abstract: 16SVPS180M 6SVPS220M 10SVPS68M 10SVPS15M 10SVPS33M 16SVPS22M 16SVPS39M 20SVPS22M 4SVPS33M
    Text: NEW Series Series '05 - 6 Aluminum solid capacitors with Conductive polymer Long life span : Endurance 5,000h at 105deg.C x RV * Lead free * Damp heat : 60deg.C x 90 to 95% x RV x 1,000h * Expected for 89,000h at 80deg.C SVPS Series Characteristics List


    Original     		PDF 105deg 60deg 80deg 100kHz-300kHz 100kHz 10SVPS10M 10SVPS15M 6SVPS22M 4SVPS33M 16SVPS22M 10SVPS10M 16SVPS180M 6SVPS220M 10SVPS68M 10SVPS15M 10SVPS33M 16SVPS22M 16SVPS39M 20SVPS22M 4SVPS33M

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


    Original     		PDF MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD

    MGF0951P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 25deg 61GHz -10MHz) 10MHz)

    42AA

    Abstract: MGF0952P mgf09
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 25deg 1000pF 330uF 42AA mgf09

    MGF0951P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 35GHz 25deg

    c id

    Abstract: 42AA MGF0952P
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 35GHz 25deg c id 42AA

    60Ghz

    Abstract: MGF0915A a4013
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm


    Original     		PDF MGF0915A MGF0915A 23dBm 50pcs) 60Ghz a4013

    4 pin 9v

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm


    Original     		PDF MGF0952P MGF0952P 15GHz 15GHz 25dBm 700mA 4 pin 9v

    0951P

    Abstract: MGF0951P 60Ghz mitsubishi mgf
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm


    Original     		PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 0951P 60Ghz mitsubishi mgf

    MGF0921A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:


    Original     		PDF MGF0921A 95GHz MGF0921A 25deg data10V -900KHz) 900KHz)

    SV372

    Abstract: No abstract text available
    Text: VCO 1.APPLICATION W-CDMA specification preliminary 1/2 IF 2.PART No. SV372CD0008 3.DIMENSIONS NC G OUT SV372 CD0008 ● SE 371 G VB max3.5 VC SIDE VIEW 10.0 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NC : GROUND NOTE : There is no mark of


    Original     		PDF SV372CD0008 SV372 CD0008 SV372 SV372CD0008 25Deg 50ohm 2SC3624A 100pF

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:


    Original     		PDF MGF0915A 95GHz MGF0915 MGF0915A 25deg -900KHz) 900KHz) -600KHz)

    MGF0951P

    Abstract: dsae001680
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P MGF0951P 35GHz 25deg dsae001680

    MGF0952P

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:


    Original     		PDF MGF0952P MGF0952P 35GHz 25deg

    MGF0921A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:


    Original     		PDF MGF0921A MGF0921A 35GHz 25deg

    idq06

    Abstract: MGF0915A
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:


    Original     		PDF MGF0915A MGF0915A 35GHz 25deg idq06

    idq04

    Abstract: 60Ghz MGF0921A
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 24 th Mar. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:


    Original     		PDF MGF0921A MGF0921A 25deg -10MHz) 10MHz) idq04 60Ghz

    KBt kyocera

    Abstract: EQM08 KBT-33SB-2T-2 sound level meter piezoelectric pressure measurement SPL EQM08-4KC-D3BX720E KYOCERA OSCILLATOR
    Text: No. EQM08-4KC-D3BX720E PRELIMINALY Messrs : APPROVAL SHEET KYOCERA CORPORATION PIEZO BUZZER SPECIFICATION (RoHS Compliant Product) APPROVED (Please signs here and send copy back to us.) Kindly send us back a copy of this specification sheet with your signature.


    Original     		PDF EQM08-4KC-D3BX720E KBT-33SB-2T-2 30deg 30minuts, 70deg 30minuts. 15minuts 12hours KBt kyocera EQM08 KBT-33SB-2T-2 sound level meter piezoelectric pressure measurement SPL EQM08-4KC-D3BX720E KYOCERA OSCILLATOR

    pin/KT2520F

    Abstract: No abstract text available
    Text: Issued Date : 4, Mar, 2011 Issued No. : K1104-11097-581 Messrs : Digi-Key RoHS Compliant Temperature Compensated Crystal Oscillator TCXO KT2520F38400DEV30TAK Technical Specification KYOCERA KINSEKI Corporation (1/6) Revision History Revision No. Revision


    Original     		PDF K1104-11097-581 KT2520F38400DEV30TAK KT2520F -20deg 80deg pin/KT2520F

    MGF0951P

    Abstract: rf id
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:


    Original     		PDF MGF0951P 95GHz MGF0951P 25deg -900KHz) 900KHz) -600KHz) rf id

    MGF0915A

    Abstract: No abstract text available
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:


    Original     		PDF MGF0915A MGF0915A 25deg 1000pF 51ohm

    MGF0907

    Abstract: MGF0907b MGF0906B
    Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0907B for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0906B － － Sample history:


    Original     		PDF MGF0907B 17GHz MGF0906B MGF0907B 14GHz 25deg MGF0907 MGF0906B

    SV1.57

    Abstract: No abstract text available
    Text: VCO 1.APPLICATION W-CDMA specification preliminary RF 2.PART No. SV1.57CD0005 3.DIMENSIONS G G OUT SV1.57 CD0005 ● SE 371 G VB max4.3 VC SIDE VIEW OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NOTE : There is no mark of terminals on the case.


    Original     		PDF 57CD0005 CD0005 57CD0005 25Deg 50ohm 2SC3624A 100pF SV1.57

    white led 3x2mm

    Abstract: L-100UBC-TR L-100UPGC-TR L-100UWC-TR LED tape
    Text: MAIN FEATURES: American Opto Plus LED !" LOW CURRENT FREQUIREMENT !" WIDE VIEWING AGNLE !" LOW POWER CONSUMPTION !" I.C. COMPATIBLE L-100XXC-TR 3X2mm CHIP LED Tape & Reel #" PACKAGE DIMENSIONS Notes: 1.All Dimensions are millimeters. 2.Tolerance is +0.25mm 0.010”


    Original     		PDF L-100XXC-TR 25deg L-100UWC-TR L-100UPGC-TR L-100UBC-TR 1/16inch) 80deg 100deg 260deg white led 3x2mm L-100UBC-TR L-100UPGC-TR L-100UWC-TR LED tape