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    BD235 PHILIPS

    Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its


    OCR Scan     		BD233 BD235 BD237 711002b aSOT-32 BD234, BD236 BD238. BD233 BD235 BD235 PHILIPS bd233 T bd237 philips BD234 BD237-10 BD237 BD238 PDF

    BDT61

    Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
    Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.


    OCR Scan     		BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON PDF

    T3D DIODE

    Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are


    OCR Scan     		BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 7z82329 T3D DIODE T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT64C PDF

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B PDF

    bdt65b

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are


    OCR Scan     		BDT65; BDT65B; BDT64; BDT65 O-220. 7Z82329 bdt65b PDF

    Untitled

    Abstract: No abstract text available
    Text: BDV91 BDV93 BDV95 _y v SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96. bbS3T31 PDF

    BD237

    Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
    Text: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs


    OCR Scan     		BD233 BD235 BD237 OT-32 BD234, BD236 BD238. BD233 BD235 BD237 Audio amplifier circuits bd238 BD234 PDF

    TS-7P

    Abstract: T-33-Z bdv65
    Text: BDV65; 65A BDV65B; 65C SbE D PHILIPS INTERNATIONAL • 7110fl2b 0D433b0 3D1 H P H I N T'33-Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. PNP complements are BDV64, 64B and 64C.


    OCR Scan     		BDV65; BDV65B; 7110fl2b 0D433b0 BDV64, BDV65 OT-93. BDV65j 711Dfl2b DD433bb TS-7P T-33-Z PDF

    MM1185

    Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
    Text: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.


    OCR Scan     		BDV65; BDV65B; 0D433L0 T-33-Z BDV64, BDV65 7Z77501 MM1185 BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 dv65 BDV64 LP 7510 7Z82768 PDF

    bdx67

    Abstract: transistor bdx67
    Text: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3> 1 Q O nW 7 • BDX67; 67A BDX67B; 67C T -3 3 -3 .7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,


    OCR Scan     		BDX67; BDX67B; BDX66, BDX66A, BDX66B BDX66C. BDX67 temperabb53T31 T-33-29 bdx67 transistor bdx67 PDF

    bd239a ti

    Abstract: No abstract text available
    Text: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.


    OCR Scan     		53T31 BD239; BD239A BD239B; BD239C BD240; BD240C. BD239 bd239a ti PDF

    BDT63

    Abstract: BDT62
    Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,


    OCR Scan     		BDT63; BDT63B; O-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 bS3T31 BDT63 BDT62 PDF

    BDT61

    Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
    Text: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		BDT61 BDT61B BDT60, T0-220. mount986 March-1986 bb53T31 GD34b03 transistor BD 512 BDT60 IEC134 1FC15 PDF

    b0951

    Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
    Text: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


    OCR Scan     		BD949; BD953; O-220 BD950; BD949 BD951 BD953 BD955 O-220. 7Z82141 b0951 b0949 B0950 LL90 BD950 BD955 IEC134 PDF

    BD679

    Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
    Text: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA


    OCR Scan     		BD675; BD679 OT-32 BD676, BD678, BD680, BD682 BD684. BD675 BD680 T-988 BD676 BD678 BD684 D0344 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP29; 29A TIP29B; 29C _ J K. SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.


    OCR Scan     		TIP29; TIP29B; TIP30 TIP29 7Z78131 0D34flfl0 PDF

    FT501

    Abstract: No abstract text available
    Text: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.


    OCR Scan     		BD949; BD953; 711002b BD950; BD949 BD951 BD953 7110fl2b FT501 PDF

    BD233

    Abstract: FT501
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs


    OCR Scan     		BD233 BD235 BD237 711002b 711062b FT501 PDF

    BDT93

    Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.


    OCR Scan     		BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT91 BDT93 711002b BDT95 BDT92 BDT96 3313 PDF

    BDT31

    Abstract: BDT31B BDT32 TIP31 T98-1
    Text: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 O G n b ö l - I I S ■ BDT31; A BDT31B; C r - 3 3 - ii SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and genera! am plifier and switching applications. The TIP31 series is an equivalent type, P-N-P complements are BDT32 series.


    OCR Scan     		bb53131 BDT31; BDT31B; r-33-n TIP31 BDT32 BDT31 T-33-11 BDT31B T98-1 PDF

    BDX95

    Abstract: BDX93 BDX94 BDX91 BDX96 BDX92 TO3 philips bdx96 philips
    Text: . m b b S B ' m 0050051 ì • N AMER PHILIPS/DISCRETE BDX91 BDX93 BDX95 5SE D T - 23-/3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in T O -3 envelope for audio output stages and general-amplifier and switching applications. P-N-P complements are B D X 92 , B D X 94 and B D X 96 .


    OCR Scan     		BDX91 BDX93 BDX95 t-23-/3 BDX92, BDX94 BDX96. BDX93 BDX95 BDX91 BDX96 BDX92 TO3 philips bdx96 philips PDF

    TIP29

    Abstract: TIP29B TIP30
    Text: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.


    OCR Scan     		TIP29; TIP29B; TIP30 TIP29 O-220. 7Z82166 ApriM981 bbS3T31 TIP29B PDF

    BD934

    Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
    Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939 PDF

    BDT29

    Abstract: BDT29B BDT30 IEC134 TIP29 BDT21
    Text: 11 N AMER PHILIPS/DISCRETE SSE D • ¡3^53^31 G G I U S B & M BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.


    OCR Scan     		BDT29; BDT29B; r-33-C BDT30 TIP29 BDT29 00nbS7 BDT29B T-33-09 IEC134 BDT21 PDF