D0344 Search Results

Contextual Info: N E C ELECTRONICS INC blE D • L427S2S D0344[]fl Sib ■ NECE MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The M C-424000A36 is a fast-page dynam ic RAM mod­ ule organized as 4,194,304 words by 36 bits and de­

uaa170

Contextual Info: 47E D • SIEM ENS A235bD5 SIEMENS 0034457 =5 « S I E Ù AKTIENGESELLSCHAF •F S S -\3 -O l LED Driver for Light Spot Displays UAA 170 Bipolar IC IC fo r drivin g 16 lig h t em ittin g diodes. D e pending on th e input vo lta g e, th e individual LED s are d riven w ithin one row in fo rm of a lig h t spot. T he U A A 170 pro vid e s a linear relation

50t65

Abstract: bd650 BD644
Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.

Z16C32

Contextual Info: P r e l im in a r y P r o d u c t S pecific a tio n < £ SLO E Z16C32 IU SC I n t e g r a t e d U n i v e r s a l S e r ia l C o n t r o l l e r FEATURES • Two Full-Capacity 20 MHz DMA Channels, Each with 32-Bit Addressing and 16-Bit Data Transfers.

FE150F

Abstract: FE150F9 UL-1950
Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

79c965

Abstract: AMD 79c97* lance
Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

Contextual Info: 47E SIEM ENS D • 6¿35b05 SIEMENS 003M4G7 5 »SIEG AKTIENGESELLSCHAF T-nrvTkv, VCR Stereo Processor TDA 6620 Preliminary Data Bipolar 1C Features • • • • Inexpensive solution for VCR sets due to a low cost external writing Identification signal based on the PLL-principle

BC105

Contextual Info: P h ilip s Sem iconductors Prelim inary specification S ilico n D arlington pow er tra n sisto rs DESCRIPTION QUICK REFER EN CE DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a TO-126 SOT32 plastic envelope intended for audio and video

Contextual Info: HN62W448I Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-770A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62W448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has realized high speed normal access 120 ns on 3.3 V supply.

HN62448NI

Abstract: d0344 44-B50
Contextual Info: HN62448NI Series 524288-word x 16-bit/l048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-771A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62448NI series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. As it has realized high speed normal access 100 ns and page mode

BD679

Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
Contextual Info: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA

Contextual Info: FINAL a IN D :-12/15 Advanced Micro Devices P A L C E 1 6 V 8 Z -1 2 /1 5 Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 30 pA Standby Current — 12 ns propagation delay for “-1 2” version

AS4C14405-60JC

Abstract: LR 3441 AS4C14405 DDD717 alliance as4C14405 AS4C1440S
Contextual Info: High Perform ance 1M X 4 CMOS DRAM « II I i A S 4 C 14405 1M X 4 C M O S E D O D R A M Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 w ords x 4 bit • H igh speed * 1024 refresh cycles, 16 m s refresh interva - KAS-only o r CAS- before -RAS refresh

Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

amd215

Contextual Info: FIN A L COM’L: -15/20, Q-25 a Advanced Micro Devices MACH445-15/20, Q-25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable

equivalent io transistor 131-G

Contextual Info: BD719 BD721 BD723 BD725 _ J V SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SO T 32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and

equivalent bd439

Abstract: D0344 b0721 B0719 BD725 B0720 BD439 BD721 BD719 BD720
Contextual Info: BD719 BD721 BD723 BD725 I SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and

Contextual Info: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its

Contextual Info: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0

SH 6770

Abstract: MC-428000A36 1J250
Contextual Info: N E C ELECTRONICS INC b lE ]> • b4S7SES 0G34434 NEC Electronics Inc. Description Pin Configuration The MC-428000A36 is a fast-page dynamic RAM mod­ ule organized as 8,388,608 words by 36 bits and de­ signed to operate from a single +5-volt power supply.

BD651

Contextual Info: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching

BD722

Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Contextual Info: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and