KM416C1200AJ
Abstract: ra57
Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
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M5321200AW/AWG
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
42-pin
72-pin
KMM5321200AW
KM416C1200AJ
ra57
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Untitled
Abstract: No abstract text available
Text: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1000DJ
16Mx4,
512Kx8)
GD3474Ã
7Tb4142
GG3474T
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BM125
Abstract: No abstract text available
Text: SMF-03300 ELECTRO NICS Sam sung M icrow ave Sem iconductor Gain Optimized Low Current G aAs FET 2-20 GHz Description Features The S M F-03300 is a 300 p.m n-channel M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrowave’s gain/low current optimized G 30 process. Ti/Pt/Au gate metallization
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SMF-03300
F-03300
BM125
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KM416S4030A
Abstract: km416s4031 KM416S4030AT-G
Text: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.
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16Bitx
KM416S4030A/KM416S4031A
416S4031AT)
KM416S4030A
km416s4031
KM416S4030AT-G
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asea EH 9-10
Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
Text: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord less phone system with frequency range under 60 MHz in ail over the
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KS8805B
KS8805B
16-DIP-300A
16-SOP-225
16-DIP-300A
KS8805BD
455KHZ
25KHZ)
asea EH 9-10
J 6920 A
ite 8892
7420 pin configuration
st 9318
7809 A PI 505
7809 ct
8500-29 B
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pin diagram priority encoder 74145
Abstract: 37-c4 NTSC/PAL TO RGB565 samsung y2 capacitor CCIR601 KS0119 KS0122
Text: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER Th e KS0122 converts analog N TSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for C C IR 601 or square pixel sample rates in either Y U V or
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KS0122
KS0122
KS0122)
0033b07
0033bQÃ
pin diagram priority encoder 74145
37-c4
NTSC/PAL TO RGB565
samsung y2 capacitor
CCIR601
KS0119
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Untitled
Abstract: No abstract text available
Text: KM44C16100AK CMOS D R A M ELECTR O NICS 1 6 Mx 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or
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KM44C16100AK
16Mx4
16Mx4,
512Kx8)
7RL4142
DG3431Ã
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
KS57C2408
up-to-12-digit
16-bit
80-pin
002b535
71b4142
D0SbS37
96-Seg
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its
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KM416C256/L/SL
DD1343Q
KM416C256/USL
130ns
KM416C256/USL-8
150ns
KM416C256/L/SL-10
KM416C256/USL-7
100ns
180ns
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Untitled
Abstract: No abstract text available
Text: KS57C0002 4-BIT CMOS Microcontroller ELECTRONICS Product Specification 2 OVERVIEW The KS57C0002 single-chip CMOS microcontroller is designed for high-performance using Samsung's newest 4-bit CPU core. With a four-channel comparator, eight LED direct drive pins, serial I/O interface, and a versatile
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KS57C0002
KS57C0002
30-pin
Me57C0002
fx/64,
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Untitled
Abstract: No abstract text available
Text: KM4 8 C 124DJ CMOS DRAM ELECTRONICS 128K x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 131,072x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time 55, 60, or 70 and power consumption
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124DJ
128Kx8
16Mx4,
512Kx8)
KM48C124DJ
KM48C
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KA7905
Abstract: 1N400I KA79XX KA7912 FC53 ka7905 regulator
Text: KA79XX C l C f* ELECTRONICS Industrial 3-TERM INAL 1A NEGATIVE V O LTA G E REG U LA TO RS Th e KA79XX se rie s of three-terminal negative regulators are available in TO -220 package and with several fixed output voltages, making them useful in a wide range of applications. E ach type em ploys internal current limiting,
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KA79XX
KA79XX
O-220
0-125X;
KA7905
KA7905
1N400I
KA7912
FC53
ka7905 regulator
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KM416C1200AJ
Abstract: No abstract text available
Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The Samsung KM M 5321200AW consists of tw o CMOS
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KMM5321200AW/AWG
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
5321200AW
KMM5321200AW
cycles/16
KM416C1200AJ
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Untitled
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUIT KA2810 VCM + SPM DRIVER for 3.5 Inch HDD The KA2810 is one chip IC designed to drive Spindle Motor SPM and Voice Coil Motor(VCM) in 3.5 inch Hard Disk Driver (HDD). The Analog Servo Control function can be performed well by built-in High-speed OPAmp and Comparators.
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KA2810
KA2810
DAN212K
MBR130T3
RB4110
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Untitled
Abstract: No abstract text available
Text: KM48V512B/BL/BLL CMOS DRAM 51 2 K x8 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM48V512B/BI7BLL-6 60ns 15ns 110ns KM48V512B/BL/BLL-7 70ns 20ns 130ns KM48V512B/BL/BLL-8 80ns 20ns 150ns •
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KM48V512B/BL/BLL
KM48V512B/BI7BLL-6
110ns
KM48V512B/BL/BLL-7
130ns
KM48V512B/BL/BLL-8
150ns
cycle/16ms
cycle/128ms
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KM44S4020AT
Abstract: 71142 a
Text: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)
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KM44S4020AT
KM44S4020A
44S4020A
44-TS0P2-400F
44-TSOP2-400R
0Q3b25&
71142 a
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Untitled
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUIT KA8601C VOICE SWITCHED SPEAKER PHONE WITH SPEECH NETWORK The KA8601C is a monolithic integrated circuit for use in high perfor mance speaker phone system. The KA8601C consist of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator
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KA8601C
KA8601C
7RL4142
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Untitled
Abstract: No abstract text available
Text: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder
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KMM5322100BKU
KMM53221OOBKU/BKUG
2Mx32
KMM5322100BKU
cycles/32
KMM5322100BKUG
cydes/32
28-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 3 2 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • T he K M 7 32 V 5 99 A /L is a 1 ,0 4 8 ,5 7 6 -b it Synchronous S ta tic R and o m A c c e s s M em ory d es ig n e d fo r high
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KM732V599A/L
32Kx32
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KM48S8030AT
Abstract: REF04 KM48S8020AT
Text: KM48S8020AT SDRAM ELECTRONICS 4M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
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KM48S8020AT
KM48S8020A/KM48S8021A
KM48S8020AT)
KM48S8030AT
REF04
KM48S8020AT
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Z359
Abstract: rb414 7-it4142
Text: KM 29V 3 2 00 0 T S Flash ELEC TRO NIC S 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K Dit x 8bit The KM29V32000TS/RS is a 4M(4,194,304)xB bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND
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KM29V32000TS
250us
Z359
rb414
7-it4142
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