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    plessey

    Abstract: BS107P
    Text: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF 72ED533 BS107P on20533 550S33 00DSSQ5 72SG533 7EEG533 plessey BS107P

    ZVP2110L

    Abstract: ZVP2110 g291
    Text: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive


    OCR Scan     		PDF ZVP2110 G-290 722DS33 G-291 G-292 G-293 ZVP2110L ZVP2110 g291

    BCW61DR

    Abstract: No abstract text available
    Text: plessey "ÏÏB s e m i c o n d /d i s c r e t e » F|7 SS05 33 DOOtitiBO = r ~T' PNP silicon planar small signal transistor BCW 61 A B S O L U T E M A X IM U M R A T IN G S Parameter Collector-Emitter Voltage Collector-Emitter Voltage Sym bol Emitter-Base Voltage


    OCR Scan     		PDF