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    CE 65 M

    Abstract: BCW65CR
    Text: PLESSEY SEMICOND/DISCRETE □3 DE I 7EEG533 0D0bL,33 □ NPN silicon planar medium power transistors BCW65 BCW66 ABSOLUTE M A X IM U M RATINGS Parameter Symbol B C W 65 B C W 66 Unit Collector-Emltter Voltage V ces 60 75 V Collector-Emitter Voltage V ceo 32


    OCR Scan     		PDF 7EEG533 BCW65 BCW66 BCW65BR CE 65 M BCW65CR

    FMMD2835

    Abstract: No abstract text available
    Text: 03 PL ESSEY SEÎ1IC0ND/DISCRETE DE I 7EEG533 OD GbSÛS 4 | ~ High speed switching diode pair common anode A B S O L U T E M A X IM U M R A T IN G S Sym bol Parameter Breakdown voltage at IR = 1 OOjjA Average rectified forward current over any 2 0 m s period


    OCR Scan     		PDF 7EEG533 D2835 FMMD2835

    plessey

    Abstract: BS107P
    Text: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF 72ED533 BS107P on20533 550S33 00DSSQ5 72SG533 7EEG533 plessey BS107P