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    722DS33 Search Results

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    BSS65

    Abstract: BSS65R
    Text: PLXSSEY SEMICOND/DISCRETE 03 PNP silicon planar high speed switching transistor DE I 722DS33 ODOLbSH 4 BSS65 , T - 3 7 -// A B S O L U T E M A X I M U M R A T IN G S Param eter Sy m b o l BSS65 U nit V CBO -1 2 V C o lle cto r-E m itte r V o lta g e V CEO


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    PDF 722DS33 BSS65 BSS65 722GS33 BSS65R BSS65R

    BPX25

    Abstract: No abstract text available
    Text: PLESSEY SEMICO ND/DISCRETE 7220533 P L E S S E Y IS SEMICOND I E|722DS33 QQQSQ1S S /DISCRETE 95D 05015 SILICON PLANAR PHOTOTRANSISTORS G E N E R A L A P P L IC A T IO N S OF F ERRAN TI P H O T O T R A N SIST O R S Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape


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    PDF 722DS33 ZM100 ZM100/110, BPX25/29) ZM110 BPX25 BPX29 ZMP31/51) ZMP31

    G199

    Abstract: ferranti 199 G198
    Text: PLESSEY S E MI CO ND / D I SC R E T E TS 7220533 PLESSEY SEMICOND/DISCRETE p Ë l? a S D S 3 3 95D 05695 ^ 3 *7 -0 ? ' Z V N 2535 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


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    PDF ZVN2535A 75S0533 G-200 G-201 752DS33 0D0570D G-202 G-203 722DS33 000S7D2 G199 ferranti 199 G198

    ZVN2206B

    Abstract: E195D plessey g-1
    Text: PLESSEY SE MICON D/ DI SC RE TE 7220533 PLESSEY TS DE I 7S E 0 S 33 DDGSbb^ 95D 05 6 6 9 SEMICOND/DISCRETE - [“ ^ N-channel enhancement mode vertical DMOS FET 3 ^ 7 ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


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    PDF ZVN2206 ZVN2206B* ZVN2206L DQ0Sb72 G-174 7S2D533 0005b73 G-175 ZVN2206B E195D plessey g-1

    G-329

    Abstract: ZVP3306 ZVP3306A
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F | 7S2[]S33 QOaSflES □ |~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE


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    PDF 75EDS33 ZVP2220 G-324 G-325 7EE0533 G-326 7220S33 -r-31-25' ZVP3306 G-329 ZVP3306 ZVP3306A

    ZVP2110L

    Abstract: ZVP2110 g291
    Text: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive


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    PDF ZVP2110 G-290 722DS33 G-291 G-292 G-293 ZVP2110L ZVP2110 g291

    G227

    Abstract: g228
    Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY ~TS DE~| 7EE0S3B □ 0 D S 7 n S 95D SEMICOND/DISCRETE 05719 T-39-11 N-channel enhancement mode vertical DMOS FET ZVN3220 FEATURES • C o m p a c t g e o m etry • F a s t s w itc h in g sp e e d s • N o se c o n d a ry b re akd o w n


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    PDF T-39-11 ZVN3220 ZVN3220L -----------------------------T-39-11 5/ZVN3220L/09/66 00DS724 G-226 G227 g228

    N-0120

    Abstract: N0120
    Text: PLESSEY SENICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE DE 1 7 5 2 D 5 3 3 D D D S t m 95D 0 5 6 0 9 T - 3 ^ .^ 5 - N-channel enhancement­ mode vertical D M O S FET ZVN 0120 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


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    PDF G-115 722DS33 00G5bl4 G-116 75EG533 G-117 7220S33 G-118 N-0120 N0120