71B4M Search Results

samsung KX

Abstract: ha13
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • 71b4m2 KM23C1Û01/1011 G □ □ 1 Ljc153 TÜfi ■ SMGK CMOS MASK ROM 1M-Bit (128KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072X 8 bit organization • Fast access time : 120ns(max). « Supply voltage : single+5V

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)

Contextual Info: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 KM23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)

SRAM timing

Contextual Info: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­

32Kx32 Synchronous

Contextual Info: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.

Contextual Info: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.

Contextual Info: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high

Contextual Info: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required clocks and video timing signals are

Contextual Info: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

D1377

Abstract: TCA 965 BP KM424C256A
Contextual Info: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)

KS57C0108

Abstract: GG45
Contextual Info: K S 5 7 C 0 1 0 4 /0 1 0 8 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C0104/0108 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain I/O pins, the KS57C0104/0108

tl527

Abstract: 741i NCN30
Contextual Info: Advance Information KM 29V64000T/R FLASH M EM O RY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The K M 29V 64000T /R is a 8 M 8 ,38 8 ,6 0 8 x8 bit N A N D • O rganization Plash m em ory w ith a sp a re 2 5 6 K (2 6 2 ,1 4 4 )x 8 bit.

rb414

Abstract: KM44C1003
Contextual Info: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

samsung p28

Contextual Info: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels

Contextual Info: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

KM48C2104A

Contextual Info: KM48C2104A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC tHPC 13ns 90ns 20ns 24ns KM48C2104A/AL/ALL/ASL-5 50ns KM48C2104A/AIVALL/ASL-6 60ns 15ns 110ns KM48C2104A/AL/ALL/ASL-7

Contextual Info: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

T2D 85 diode

Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V

KM68257

Abstract: a12g KM68257lp km68257P u 242 samsung KM68257LP-25 SRAM SAMSUNG
Contextual Info: SAMSUNG SEMICONDUCTOR IN C 23E D • 7^ 4142 GÜDñSTb T ■ CMOS SRAM KM68257P/KM68257LP 32K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.)

ic KA7812

Abstract: sheet ka7812 DD35AL KA7810 ka7805 samsung KA7824 SAMSUNG IC. KA7812 Ka7805 diagram KA7810A WV KA7815
Contextual Info: KA78XX ELECTRONICS Industria] 3-TERM INAL 1A POSITIVE VOLTAGE REGULATORS The KA78XX series of three-terminal positive regulators are available in the T 0-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current

KM416S4030AT

Abstract: ZX-03 KM416S4030AT-G
Contextual Info: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.

IRFS351

Abstract: 250M IRFS350
Contextual Info: N-CHANNEL POWER MOSFETS IRFS350/351 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability