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    SRAM timing

    Abstract: No abstract text available
    Text: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­


    OCR Scan     		KM79C86 32Kx9 44-Pin 912xx/ KM79C86 7Tb4142 DD177S1 SRAM timing PDF

    18-PIN

    Abstract: MSM51C256A 1772B
    Text: O K I Semiconductor MSM5 1 C256 A 262,144-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51C256A is a new generation dynamic RAM organized as 262,144-word x 1-bit. The technology used to fabricate the MSM51C256A is OKI's COMS silicon gate process technology.


    OCR Scan     		MSM51C256A 144-Word MSM51C256A b724240 24g40 D01773E 18-PIN 1772B PDF