MA4P506-30
Abstract: No abstract text available
Text: M/ A- CO n SEtlICONDiBRLNGTON 11 ]> • 5b42214 OOQllHb T ■ M I C 1 - 0 7 -I s' Packaged Silicon PIN Diodes Features ■ HIGH POW ER PIN DIODES O D S-30 — ■ FA ST SPEED PIN DIODES ■ VO LTA G E R ATIN G S TO 2000 VO LTS ■ LONG CARRIER LIFE TIM E DESIGNS
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5b42214
MA4P506-30
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1N4387
Abstract: 1N4386 1N5154 1N5150 1N5151 1N5150-5157 1N5155 1N4388 1N5149 1N5150A
Text: M/A-con s e u i c o n d t Br lngto n h d A$ m 5b42214 QGQlB'iL. h • MIC T-07-11 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features ■ HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are
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5b42214
1N4386-88
1N5150-5157
TWXT-07-11
1N4387
1N4386
1N5154
1N5150
1N5151
1N5155
1N4388
1N5149
1N5150A
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impatt
Abstract: Gunn Diode MA45338 IMPATT Diode stub tuner waveguide MA45330 MA45331 MA45332 MA45333 MA45334
Text: M/ A- CO H S E U I C O N D n B R L N G T O N Ajm 11 D Sb42214 G0D12S0 0 H M I C 1-0 MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors * V Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH
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Sb42214
G0D1250
MA45300
impatt
Gunn Diode
MA45338
IMPATT Diode
stub tuner waveguide
MA45330
MA45331
MA45332
MA45333
MA45334
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MA46600
Abstract: MA46601 MA46602 MA46603 MA46604 MA46605 MA46607 impatt
Text: M/A-COM SEfllCOND-.BRLNGTON 11 » Sb42214 0GG1234 2 «MIC - T - 07- 11 s y m MA46600 Series GaAs Tuning Varactors Features • HIGHEST Q ■ LARGE CAPACITANCE VARIATION WITH VOLTAGE ABRUPT JUNCTION ■ CUSTOM TAILORED DESIGNS AVAILABLE ON REQUEST Applications
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Sb42214
MA46600
MA46601
MA46602
MA46603
MA46604
MA46605
MA46607
impatt
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MA4l limiter
Abstract: MA4L031-134 Microwave PIN diode 3810 MA4L401-132 MA4L301-134
Text: M/A-COM SEMICONDtBRLNGTON Il 1 m SbMSSlM OQOllbM 7 « M I C Limiter PIIU Diodes Features • LOW TURN ON POWER ■ HIGH PEAK POWER DEVICES ■ CHIPS AND PACKAGED DEVICES Description Applications M/A-COM’s Semiconductor Products produces a series of PIN diodes specifically designed for limiter applications.
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Gunn Diode MA49156
Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
Text: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO
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5b4E514
MA49000
SbM2S14
DGD1424
T-07-11
Gunn Diode MA49156
MA49156
24 GHz Microwave Doppler Radar Speed Sensor
MA49172
MA49508
Gunn Diode at power supply circuit
police radar detector
x-band varactor diode
MA49159
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varactor diode capacitance measurement
Abstract: impatt diode Gunn diode GaAs Gunn Diode "94 GHz" radar gunn diode GaAs Gunn Diode impatt varactor diode high frequency GHz MA48700 Gunn Diode e band
Text: M/A-COM S E N ICOND tBRLNGTON 11 D • SbM22m ÜGG14DG M ■MIC A fiA s A y fi T - 0 7 - ii MA48700 Series GaAs Multiplier Varactors Features ■ HIGH CUTOFF FREQUENCY r ~\ ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY
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t-07-11
MA48700
varactor diode capacitance measurement
impatt diode
Gunn diode
GaAs Gunn Diode "94 GHz"
radar gunn diode
GaAs Gunn Diode
impatt
varactor diode high frequency GHz
Gunn Diode e band
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IN 4002 MIC diode
Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
Text: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES
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SbM2E14
GD0113M
IN 4002 MIC diode
MA47054
1N5719 equivalent
ma-47266
1N5719 JANTX
diode D 07-15 15
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a4p50
Abstract: No abstract text available
Text: M/A-COM SEMICONDiBRLNGTON /y m 11 SL.42214 DDQlllfl G • M I C ‘ T ~ 6 T ~ * Silicon PIN Diode Chips Features ■ GLASS OR SILICON DIOXIDE PASSIVATION ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS
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5b42214
QDD112S
a4p50
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"Varactor Diode" ma 4060
Abstract: varactor multiplier MA44700 varactor diode high frequency GHz step recovery diode MA44700 Series Multiplier Varactors MA44701 MA44705 MA44703 MA44710
Text: /MÎK m/a-com s e u i c o n d t B r l n c t o n 11 d • I S b 4 2 a m 0001304 t T -07-11 MA44700 Series Dualmode Multiplier Varactors Features ■ HIGHER EFFICIENCY IN HIGH POWER MULTIPLIER ■ BETTER BANDWIDTH THAN STEP RECOVERY DIODES IN LOW ORDER MULTIPLIERS
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Sb42ai4
T-07-11
MA44700
"Varactor Diode" ma 4060
varactor multiplier
varactor diode high frequency GHz
step recovery diode
MA44700 Series Multiplier Varactors
MA44701
MA44705
MA44703
MA44710
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MA4ST550
Abstract: ODS-134 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST555 MA4ST556 MA4ST557 MA4ST558
Text: M/A-COM SEMICONDtBRLNGTON MA- 11 D S b 4 2 S l 4 DDG121b. G « M I C I ''0 7 '' MA4ST550 Series High Q Silicon Hyperabrupt Tuning Varactors Features • HIGH Q ■ USABLE CAPACITANCE CHANGE OF 7:1 ■ LOW REVERSE LEAKAGE FOR GOOD POST TUNING DRIFT CHARACTERISTICS
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MA4ST550
ODS-134
MA4ST551
MA4ST552
MA4ST553
MA4ST554
MA4ST555
MA4ST556
MA4ST557
MA4ST558
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MA44700
Abstract: GG013 gg01
Text: n/A- CO M S E M I C O N D n B R L N G T O N 11 D • SbMSSm 00013^2 T ■MIC 6 ~?~ ( MA44700A Series Stackpack & Super Stackpack™ Multiplier Diodes Features ■ HIGH REVERSE VOLTAGE ■ LOW TRANSITION TIME ■ LOW CAPACITANCE ■ LOW THERMAL RESISTANCE
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Sbt22m
GG013
MA44700A
T-07-11
MA44700
gg01
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missile seeker
Abstract: police radar detector police radar detector detector m/a-com impatt police radar detector local oscillator frequency seeker gunn diode x band radar 46470 model impatt MA45234
Text: M/ A - C O M S E M I C O N D t B R L N G T O N /ysKcm 11 _ ] > • S b M 2 2 1 M 00 ]:L2M2 1 ■ M I C ' . . . " MA45200 Series Silicon Abrupt Junction Tuning Varactors Features ■ HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM ■ AVAILABLE IN CERAMIC PACKAGES
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SbM2214
0G01S42
MA45200
missile seeker
police radar detector
police radar detector detector
m/a-com impatt
police radar detector local oscillator frequency
seeker
gunn diode x band radar
46470 model
impatt
MA45234
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MA4ST520D
Abstract: MA4ST520 MA4ST520A MA4ST520B MA4ST520C MA4ST522 MA4ST522A MA4ST522B MA4ST522C
Text: M/ A- CO M S E M I C O N D t B R L N G T O N 11 D • 5b422m 0001200 1 ■ M I C \ M A 4 ST 52 0/M A 4ST 53 0 Serie s UHF9VHF Silicon Hyperabrupt Tuning Varactors Features ■ A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE REPEATABLE C-V CHARACTERISTICS
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sb422m
MA4ST520/MA4ST530
MA4ST520
MA4ST530
Sb45514
MA4ST520D
MA4ST520A
MA4ST520B
MA4ST520C
MA4ST522
MA4ST522A
MA4ST522B
MA4ST522C
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f 32057
Abstract: T Y 41357
Text: TI/A-COn SEflICONDiBRLNGTON MAE D 51=45214 0DD117S 0 • MIC GMIC Switches M A T S I-ll MA4MG201 and MA4MG202 PIN Diode SPOT Switch Chips with Integrated Bias Network Features Usable Frequency Range: 2-21 GHz MA4MG201 4-21 GHz (MA4MG202) Bias Circuit and PIN Diode
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0DD117S
MA4MG201
MA4MG202
MA4MG201)
MA4MG202)
f 32057
T Y 41357
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