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    SB42214 Search Results

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    SB42214 Price and Stock

    PEI Genesis CT1USBSB4-22-14SC

    ER 19C 19#16 SKT RCPT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CT1USBSB4-22-14SC Bag 1
    • 1 $252.29
    • 10 $180.2
    • 100 $128.72
    • 1000 $128.72
    • 10000 $128.72
    Buy Now

    PEI Genesis CT1USBSB4-22-14PC

    ER 19C 19#16 PIN RCPT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CT1USBSB4-22-14PC Bag 1
    • 1 $229
    • 10 $163.57
    • 100 $116.84
    • 1000 $116.84
    • 10000 $116.84
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    PEI Genesis AIT6USSB4-22-14PZS

    CONN PLUG MALE 19P SILV SLDR CUP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AIT6USSB4-22-14PZS Bag 1
    • 1 $128.99
    • 10 $92.13
    • 100 $65.81
    • 1000 $65.81
    • 10000 $65.81
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    Amphenol Corporation AIB30USB4-22-14P0-025-M4

    Circular MIL Spec Connector GT 19C 19#16 PIN RECP WALL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AIB30USB4-22-14P0-025-M4
    • 1 $94.27
    • 10 $85.56
    • 100 $75.87
    • 1000 $75.87
    • 10000 $75.87
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    Amphenol Corporation AIT6GSB4-22-14PS

    Circular MIL Spec Connector ER 19C 19#16 PIN PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AIT6GSB4-22-14PS
    • 1 $97.45
    • 10 $79.47
    • 100 $69.3
    • 1000 $69.3
    • 10000 $69.3
    Get Quote

    SB42214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    impatt

    Abstract: Gunn Diode MA45338 IMPATT Diode stub tuner waveguide MA45330 MA45331 MA45332 MA45333 MA45334
    Text: M/ A- CO H S E U I C O N D n B R L N G T O N Ajm 11 D Sb42214 G0D12S0 0 H M I C 1-0 MA45300 Series Axial Lead Silicon Planar Abrupt Tuning Varactors * V Features • HIGH Q ■ LOW LEAKAGE ■ LOW POST TUNING DRIFT ■ CUSTOM DESIGNS AVAILABLE ■ FREQUENCY RANGE THROUGH


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    PDF Sb42214 G0D1250 MA45300 impatt Gunn Diode MA45338 IMPATT Diode stub tuner waveguide MA45330 MA45331 MA45332 MA45333 MA45334

    MA46600

    Abstract: MA46601 MA46602 MA46603 MA46604 MA46605 MA46607 impatt
    Text: M/A-COM SEfllCOND-.BRLNGTON 11 » Sb42214 0GG1234 2 «MIC - T - 07- 11 s y m MA46600 Series GaAs Tuning Varactors Features • HIGHEST Q ■ LARGE CAPACITANCE VARIATION WITH VOLTAGE ABRUPT JUNCTION ■ CUSTOM TAILORED DESIGNS AVAILABLE ON REQUEST Applications


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    PDF Sb42214 MA46600 MA46601 MA46602 MA46603 MA46604 MA46605 MA46607 impatt

    JAN1N23WG

    Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
    Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED


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    PDF

    MA4853

    Abstract: all diodes ratings
    Text: M/A-COM A SEMICONDtBRLNGTON l^ s V 11 D • 5b45214 D0G132Ö G ■MIC n T-07-07 Axial Lead Glass Packaged Silicon Schottky Mixer Diodes Features ■ HIGH RELIABILITY ■ SCREENING TO JANTXV LEVEL AVAILABLE f t= 7 /= 54 ' - \ J ■ LOW, MEDIUM AND HIGH BARRIER


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    PDF 5b45214 D0G132Ö T-07-07 MA4853 all diodes ratings

    MA4E917

    Abstract: 00G132 MA4E913
    Text: M/A-COn SEMICOND-.BRLNGTON 11 D • SbM2214 D0D1322 T H m e Ajfocam T - 07 -o y Ceramic Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ CAN BE SCREENED TO JANTXV LEVELS ■ UNIFORM RF CHARACTERISTICS Applications


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    PDF SbM2214 D0D1322 MA4E917 00G132 MA4E913

    MA40092

    Abstract: No abstract text available
    Text: M/ A- CO N S E M I C O N D n B R L N G T O N 11 ]> • 5b42S14 GOGIETE S ■ M I C Stripline Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER


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    PDF 5b42S14 MA40092

    IN 4002 MIC diode

    Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
    Text: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES


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    PDF SbM2E14 GD0113M IN 4002 MIC diode MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15

    Untitled

    Abstract: No abstract text available
    Text: n/A-CON SEMICONDnBRLNGTON 11 D S b l4 2 S m 0G0134Û b • MIC / - O 7 ^ -6 7 /M W Zero Bias Detector Diodes Features ■ CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS


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    PDF 0G0134Û 5b4EE14 DQG13S4

    MA4ST520D

    Abstract: MA4ST520 MA4ST520A MA4ST520B MA4ST520C MA4ST522 MA4ST522A MA4ST522B MA4ST522C
    Text: M/ A- CO M S E M I C O N D t B R L N G T O N 11 D • 5b422m 0001200 1 ■ M I C \ M A 4 ST 52 0/M A 4ST 53 0 Serie s UHF9VHF Silicon Hyperabrupt Tuning Varactors Features ■ A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE REPEATABLE C-V CHARACTERISTICS


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    PDF sb422m MA4ST520/MA4ST530 MA4ST520 MA4ST530 Sb45514 MA4ST520D MA4ST520A MA4ST520B MA4ST520C MA4ST522 MA4ST522A MA4ST522B MA4ST522C

    Gunn Diode

    Abstract: MA46450 MA46470 gunn diodes MA46451 MA46452 MA46454 MA46455 MA46480 0QQ12
    Text: M/A-CON SEMICOND-.BRLNGTON 11 D • 5bM22m QQ01S2b 3 M M I C ^ _ c><7„ /? yflMCDM MA46450 through MA46480 Series — 1.00 and 1.25 Gamma GaAs Hyperabrupt Tuning Varactors Features ■ CONSTANT GAMMA = 1.0 OR 1.25 ■ HIGH Q UP TO 4000 AT - 4 VOLTS ■ LARGE CAPACITANCE CHANGE WITH


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    PDF 5b42214 Q0ai22Li MA46450 MA46480 MA46470 MA46450-MA46470 Gunn Diode gunn diodes MA46451 MA46452 MA46454 MA46455 0QQ12

    FET transistors with s-parameters

    Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
    Text: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


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    PDF 000Db25 MA4F004 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 FET transistors with s-parameters MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918

    1N5165

    Abstract: No abstract text available
    Text: n/ A- COM S E M I C O N D i B R L N G T O N A ju t m 11 V WÊ S b 4 2 E 1 4 GD01344 1 • M I C '-p ■ Axial Lead Glass Packaged Schottky Diodes Features ■ PICOSECOND SWITCHING ■ JANTX/JANTXV SCREENING AVAILABLE ■ LOW FORWARD VOLTAGE DROP ■ LOW REVERSE LEAKAGE


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    PDF GD01344 MA4E2835 Sb42214 0GD1347 T-07-15 272-30Q0 1N5165