Untitled
Abstract: No abstract text available
Text: MA4ST520A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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MA4ST520A
Voltage22
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Untitled
Abstract: No abstract text available
Text: MA4ST520A132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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MA4ST520A132
Voltage22
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Untitled
Abstract: No abstract text available
Text: MA4ST520B132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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MA4ST520B132
Voltage22
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MA4ST534C
Abstract: No abstract text available
Text: UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series V3.00 Case Style See appendix for complete dimensions Features ● ● ● A Superior Ion Implantation Process Results in More Repeatable C-V Characteristics Within Specified Capacitance Tolerances
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MA4ST520,
MA4ST530
MA4ST520
MA4ST534C
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Abstract: No abstract text available
Text: MA4ST520B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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MA4ST520B
Voltage22
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Untitled
Abstract: No abstract text available
Text: MA4ST520C132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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MA4ST520C132
Voltage22
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Untitled
Abstract: No abstract text available
Text: MA4ST520D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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MA4ST520D
Voltage22
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Untitled
Abstract: No abstract text available
Text: MA4ST520D132 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleChip
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MA4ST520D132
Voltage22
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Untitled
Abstract: No abstract text available
Text: MA4ST520C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.20p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage22 Q Factor Min.300 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7
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MA4ST520C
Voltage22
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RE14
Abstract: No abstract text available
Text: A f ik v m MA4ST520/MA4ST530 Series UHF, VHF Silicon Hyperabrupt Tuning Varactors Features • A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE REPEATABLE C-V CHARACTERISTICS WITHIN SPECIFIED CAPACITANCE
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MA4ST520/MA4ST530
MA4ST520
MA4ST530
MA4ST530
RE14
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Untitled
Abstract: No abstract text available
Text: /ifo C C M MA4ST520/MA4ST530 Series UHF, VHF Silicon Hyperabrupt Tuning Varactors Features • A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE
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MA4ST520/MA4ST530
MA4ST520
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MA4ST533B
Abstract: No abstract text available
Text: an A M P com pany UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series V3.00 Case Style See appendix for complete dimensions Features • A Superior Ion Implantation Process Results in More Repeatable C-V Characteristics Within Specified Capacitance Tolerances
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OCR Scan
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PDF
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MA4ST520
MA4ST520,
MA4ST530
MA4ST533B
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MA4ST534C
Abstract: No abstract text available
Text: M fo C C M w a n A M P com pany UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series Features Case Style See appendix for complete dimensions V 2 .00 • A S u p erio r Io n Im p lantatio n P ro cess R esults in M ore R ep ea ta b le C-V C h aracteristics W ithin S p ecified
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MA4ST520,
MA4ST530
MA4ST534C
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Untitled
Abstract: No abstract text available
Text: Æ an A M P c< o m p a n y UHF, VHF Hyperabrupt Tuning Varactors MA4ST520, MA4ST530 Series V3.00 Case Style See appendix for complete dimensions Features • A Superior Ion Implantation Process Results in More Repeatable C-V Characteristics Within Specified
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MA4ST520
MA4ST520,
MA4ST530
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MA4ST520D
Abstract: MA4ST520 MA4ST520A MA4ST520B MA4ST520C MA4ST522 MA4ST522A MA4ST522B MA4ST522C
Text: M/ A- CO M S E M I C O N D t B R L N G T O N 11 D • 5b422m 0001200 1 ■ M I C \ M A 4 ST 52 0/M A 4ST 53 0 Serie s UHF9VHF Silicon Hyperabrupt Tuning Varactors Features ■ A SUPERIOR ION IMPLANTATION PROCESS RESULTS IN MORE REPEATABLE C-V CHARACTERISTICS
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sb422m
MA4ST520/MA4ST530
MA4ST520
MA4ST530
Sb45514
MA4ST520D
MA4ST520A
MA4ST520B
MA4ST520C
MA4ST522
MA4ST522A
MA4ST522B
MA4ST522C
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